4 A Small Signal Bipolar Junction Transistors (BJT) 211

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
PBSS5480X,135	NXP Semiconductors	PNP	SINGLE	YES	125 MHz	2.5 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	80 V			TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260
PBSS5440D,115	NXP Semiconductors	PNP	SINGLE	YES	110 MHz	2.5 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	6	SMALL OUTLINE	Other Transistors	30	150 Cel	SILICON	40 V			TIN	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
NZT651	Onsemi	NPN	SINGLE	YES	75 MHz	1.2 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	40	150 Cel	SILICON	60 V			MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
PBSS5540X,135	NXP Semiconductors	PNP	SINGLE	YES	60 MHz	2.5 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel	SILICON	40 V			TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260
PBSS4480X,135	NXP Semiconductors	NPN	SINGLE	YES	150 MHz	2.5 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	250	150 Cel	SILICON	80 V			TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified		TO-243AA	e3	30	260
ZXTP2027FTA	Diodes Incorporated	PNP	SINGLE	YES	165 MHz	1.56 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	20	150 Cel	SILICON	60 V			MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
PBSS305PX,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	2.1 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	80 V	100 ns	285 ns	TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
BUJ103AD,118	NXP Semiconductors	NPN	SINGLE	YES		80 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	13	150 Cel	SILICON	400 V	600 ns	61.4 ns	TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-252	e3
ZXTN07045EFFTA	Diodes Incorporated	NPN	SINGLE	YES	190 MHz	2 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	70	150 Cel	SILICON	45 V			MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
DSS4540X-13	Diodes Incorporated	NPN	SINGLE	YES	70 MHz	2 W	4 A	PLASTIC/EPOXY	SWITCHING	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	100	150 Cel	SILICON	40 V			MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
ZXTC6719MCTA	Diodes Incorporated	NPN AND PNP	SEPARATE, 2 ELEMENTS	YES	165 MHz	3 W	4 A	PLASTIC/EPOXY	SWITCHING	NO LEAD	RECTANGULAR	2	8	SMALL OUTLINE	BIP General Purpose Small Signal	100	150 Cel	SILICON	50 V			NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N8	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e4	30	260
ZXTP25020CFHTA	Diodes Incorporated	PNP	SINGLE	YES	285 MHz	1.81 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	85	150 Cel	SILICON	20 V			MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2SD2672TL	ROHM	NPN	SINGLE	YES	250 MHz	.5 W	4 A	PLASTIC/EPOXY	AMPLIFIER	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	270	150 Cel	SILICON	12 V			TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
2SD1223(TE16L1,NQ)	Toshiba	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES			4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE		1000		SILICON	80 V				SINGLE	R-PSSO-G2		COLLECTOR
2SD1816QTP	Onsemi	NPN	SINGLE	NO		20 W	4 A					1			Other Transistors	70	150 Cel
2SB1216T-TL-H	Onsemi	PNP	SINGLE	YES	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6
2SD1816STP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A					1			Other Transistors	140	150 Cel
2SB1216T-TL-E	Onsemi	PNP	SINGLE	YES	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6
2SB1216RTP	Onsemi	PNP	SINGLE	NO		20 W	4 A					1			Other Transistors	100	150 Cel
2SB1216S-E	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SB1216QTP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A					1			Other Transistors	70	150 Cel
2SD1816T-H	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SD1816RTP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A					1			Other Transistors	100	150 Cel
2SB1216T-H	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SD1816TTP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A					1			Other Transistors	200	150 Cel
2SD1816S-H	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SB1216STP	Onsemi	PNP	SINGLE	NO		20 W	4 A					1			Other Transistors	140	150 Cel
2SB1325	Onsemi	PNP		YES		1.5 W	4 A								BIP General Purpose Small Signal			SILICON
2SB1216STP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A					1			Other Transistors	140	150 Cel
2SD1816S-E	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SB1216S-TL-E	Onsemi	PNP	SINGLE	YES	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6	30	260
2SB1216RTP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A					1			Other Transistors	100	150 Cel
2SB1216TTP-FA	Onsemi	PNP	SINGLE	YES		20 W	4 A					1			Other Transistors	200	150 Cel
2SD1816T-TL-E	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	100 V			Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6	30	260
2SB1216T-E	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SB1216S-H	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SB1216S	Onsemi	PNP	SINGLE	NO	130 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	140	150 Cel	SILICON	100 V				SINGLE	R-PSIP-T3		COLLECTOR
2SB1216TTP	Onsemi	PNP	SINGLE	NO		20 W	4 A					1			Other Transistors	200	150 Cel
2SB1216QTP	Onsemi	PNP	SINGLE	NO		20 W	4 A					1			Other Transistors	70	150 Cel
2SD1816RTP	Onsemi	NPN	SINGLE	NO		20 W	4 A					1			Other Transistors	100	150 Cel
2SD1999	Onsemi	NPN		YES		1.5 W	4 A								BIP General Purpose Small Signal			SILICON
2SD1816T-TL-H	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	200	150 Cel	SILICON	100 V			Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6	30	260
2SD1816STP	Onsemi	NPN	SINGLE	NO		20 W	4 A					1			Other Transistors	140	150 Cel
2SD1816T-E	Onsemi	NPN	SINGLE	NO	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors	200	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e6
2SD1816S-TL-H	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	140	150 Cel	SILICON	100 V			TIN BISMUTH	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6	30	260
2SD1816QTP-FA	Onsemi	NPN	SINGLE	YES		20 W	4 A					1			Other Transistors	70	150 Cel
2SD1816TTP	Onsemi	NPN	SINGLE	NO		20 W	4 A					1			Other Transistors	200	150 Cel
2SD1816S-TL-E	Onsemi	NPN	SINGLE	YES	180 MHz	20 W	4 A	PLASTIC/EPOXY	SWITCHING	GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors	140	150 Cel	SILICON	100 V			Tin/Bismuth (Sn/Bi)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e6	30	260

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395