.15 W Small Signal Bipolar Junction Transistors (BJT) 1,876

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

GN4A3Q-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN1L3ZM36-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1L3N-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4L4L-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN4F4N-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN4A4M-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

BRA124ECMUL

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

56

SILICON

GN4L4K

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.212

e0

GN4L4M-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA1A4M-T1-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4L4L-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

90

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.468

NOT SPECIFIED

NOT SPECIFIED

GA4A4Z-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN4L3N-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.127

NOT SPECIFIED

NOT SPECIFIED

GN1A4ZM68-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA4F4Z-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1A4ZM67-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1F4ZM65-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA1L3N-T1

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

KN4L4M

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e0

GA1F4Z-L64

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1A4ZM67-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN4F4Z-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA1L3Z-L36

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1A4Z-M67

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA4A4P-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN4F3M-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

GN1A4ZM68-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA1A4Z-T2-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

GA1L4ZL62-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD2228D44-T2

Renesas Electronics

NPN

SINGLE

YES

50 MHz

.15 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

270

150 Cel

SILICON

16 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

GN4L3N-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

TIN BISMUTH

e6

2SD2228D42-T2

Renesas Electronics

NPN

SINGLE

YES

50 MHz

.15 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

16 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

GN4A3Q-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 10

NOT SPECIFIED

NOT SPECIFIED

GN4A4M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

GN4L4L-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN1L4ZM62-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA1A4M-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN1L4M-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN1A4Z-M68

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GN1F4N-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KN4A4P

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 4.7

e0

BRC124ECMUL

Renesas Electronics

NPN

YES

.15 W

1

BIP General Purpose Small Signal

SILICON

GN1A4M-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN1L3N-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4F4Z-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA1L4M-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA1F4Z-L65

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GN1A4Z-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395