50 MHz Small Signal Bipolar Junction Transistors (BJT) 1,434

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MPSA42SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

2N6717STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6716L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6716M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

2N6715L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA43Q

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

200 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

2N6716SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

2N6727STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

FCX558QTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.2 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

400 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

HIGH RELIABILITY

e3

260

AEC-Q101

FCX593TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

260

2N6729Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6728STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6731M1TC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6715K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

2N6731M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6726STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX758STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

MPSA93STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

30

SILICON

200 V

SINGLE

R-PSIP-T3

Not Qualified

CECC

2N6717K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA42M1

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA92M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

2N6715M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

2N6727L

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

2N6732STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6717SMTA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6729SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6714STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA92DWP

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

25

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

2N6727M1TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

2N6716STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA42Q

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

2N6718STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA42DWP

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

40

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

MPSA42STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

2N6715SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

UFCX558TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

400 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6728Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

USXTA42TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

300 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

USXTA42

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

40

SILICON

300 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

2N6727

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

TIN LEAD

SINGLE

R-PSIP-W3

Not Qualified

e0

ZUMT5088

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.05 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

300

150 Cel

SILICON

30 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6714

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

2N6730SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

FXTA42STOA

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

2N6728K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

FCX458

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1.5 W

.225 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

400 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

30

260

FXTA42SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

FXTA92

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

25

SILICON

300 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395