50 MHz Small Signal Bipolar Junction Transistors (BJT) 1,434

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UZTX758STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6728L

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6727K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

2N6718M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

2N6731

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

FXTA42STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

2N6732SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

FCX593

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

100

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

260

2N6726L

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

FXT458STOA

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.3 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

400 V

135 ns

2260 ns

BOTTOM

O-PBCY-W3

Not Qualified

2N6730STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

2N6727SMTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

2N6728M1TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX558STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UFCX458

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.225 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

400 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

UZTX558SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

400 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6717M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX450M1TC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

MPSA43M1

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

200 V

SINGLE

R-PSSO-G3

Not Qualified

FXTA42

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

TO-92

2N6717M1

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6714L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

2N6732STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX658

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

40

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

2N6717STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6728M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA92SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

2N6716SMTC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

FZT458QTA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.3 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

15

SILICON

400 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

HIGH RELIABILITY

e3

30

260

AEC-Q101

2N6726M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

2N6732M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

UFCX593

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

2N6728STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6718Q

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

FXTA92STOA

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

DZT658-13

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 W

.5 A

PLASTIC/EPOXY

SWITCHING

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

10 pF

SILICON

400 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

2N6718K

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

UFCX558

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

400 V

MATTE TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

e3

40

260

BFY52DWP

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

60

SILICON

20 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

10

235

UFCX593TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MPSA43DWP

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

50

SILICON

200 V

UPPER

S-XUUC-N2

Not Qualified

2N6726STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

30 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA93STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

30

SILICON

200 V

SINGLE

R-PSIP-T3

Not Qualified

CECC

DXTA42-13

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 W

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

300 V

MATTE TIN

DUAL

R-PDSO-F4

1

COLLECTOR

Not Qualified

e3

30

260

MPSA92-A

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

PLASTIC/EPOXY

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

40

150 Cel

8 pF

SILICON

300 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2N6717Q

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX758

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

50

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

MPSA93M1

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

200 V

SINGLE

R-PSSO-G3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395