50 MHz Small Signal Bipolar Junction Transistors (BJT) 1,434

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UZTX458STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6716STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6730STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

FXTA92SM

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

2N6732STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

100

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX658STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

400 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N6726SMTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

2N6718SMTC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6729SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6717SMTC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA42L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

40

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

HT3

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

80 V

500 ns

1000 ns

DUAL

R-PDSO-G3

Not Qualified

2N6728M1TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA92SMTA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

300 V

SINGLE

R-PSSO-G3

Not Qualified

2N6726M1TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

30 V

SINGLE

R-PSSO-G3

Not Qualified

2N6730L

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

UZTX450M1TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

45 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

2N6730M1TA

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA92K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

HT3TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

80 V

500 ns

1000 ns

DUAL

R-PDSO-G3

Not Qualified

CECC

2N6731M1

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

UZTX458SMTC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

15

SILICON

400 V

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MPSA93DWP

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

30

SILICON

200 V

UPPER

S-XUUC-N2

Not Qualified

UZTX458

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.3 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

400 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

MPSA92STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

2N6729

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6727SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

FXTA92STOB

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

MPSA93K

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

30

SILICON

200 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

MPSA92Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

25

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

CECC

2N6728SMTC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

2N6717M1TC

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

MPSA43STOA

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

50

SILICON

200 V

SINGLE

R-PSIP-T3

Not Qualified

CECC

MPSA43STOB

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

50

SILICON

200 V

SINGLE

R-PSIP-T3

Not Qualified

CECC

2N6728

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6718STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6732M1TC

Diodes Incorporated

PNP

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

80 V

SINGLE

R-PSSO-G3

Not Qualified

2N6716

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6731SM

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

100 V

SINGLE

R-PSSO-G3

Not Qualified

UFCX458TA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

.225 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

400 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BFY51DWP

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

40

SILICON

30 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

10

235

2N6728STZ

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

60 V

SINGLE

R-PSIP-W3

Not Qualified

2N6718STOA

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

80 V

SINGLE

R-PSIP-W3

Not Qualified

2N6727Q

Diodes Incorporated

PNP

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

40 V

SINGLE

R-PSIP-W3

Not Qualified

2N6716M1

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

SILICON

60 V

SINGLE

R-PSSO-G3

Not Qualified

FXTA42STZ

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

50

SILICON

300 V

SINGLE

R-PSIP-W3

Not Qualified

2N6718L

Diodes Incorporated

NPN

SINGLE

NO

50 MHz

1 A

PLASTIC/EPOXY

WIRE

RECTANGULAR

1

3

IN-LINE

20

SILICON

100 V

SINGLE

R-PSIP-W3

Not Qualified

2N6715SMTA

Diodes Incorporated

NPN

SINGLE

YES

50 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

SILICON

40 V

SINGLE

R-PSSO-G3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395