Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KA4F3P-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FN4F4M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.13

e6

2SD2485

Renesas Electronics

NO

PLASTIC/EPOXY

WIRE

ROUND

3

CYLINDRICAL

BOTTOM

O-PBCY-W3

Not Qualified

GA1A4ZL69-T2-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

GA1L3M-T2-AT

Renesas Electronics

AB1L3N

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.75 W

.7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

BIP General Purpose Small Signal

135

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 2.12

TO-92

BRA144ECMUL

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

70

SILICON

GN1F4ZM64-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1A4Z

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

FA4F4N-L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

HD1A4M-T2

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD780AD52-T1B

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

80 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

FA4F4M-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

UPA77HA-P

Renesas Electronics

PNP

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

2

7

IN-LINE

Other Transistors

200

125 Cel

SILICON

60 V

SINGLE

R-PSIP-T7

Not Qualified

UPA74HA

Renesas Electronics

NPN

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

2

7

IN-LINE

150

SILICON

80 V

SINGLE

R-PSIP-T7

Not Qualified

KA4L4M

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

e0

2SD414P

Renesas Electronics

NPN

SINGLE

NO

70 MHz

10 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

160

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

KA4F4Z-T1-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

TIN BISMUTH

e6

2SB647DTZ

Renesas Electronics

PNP

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

SILICON

80 V

BOTTOM

O-PBCY-T3

Not Qualified

FA1F4Z-L64

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

IT122

Renesas Electronics

NPN

SEPARATE, 2 ELEMENTS

NO

180 MHz

.01 A

METAL

WIRE

ROUND

2

6

CYLINDRICAL

100

SILICON

45 V

BOTTOM

O-MBCY-W6

HIGH RELIABILITY

FN4L3Z-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SB800FL-T2-AZ

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

80 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GA1F4Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

FN1A4P-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA1L4L-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SD2463-M

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

6 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

4000

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

2SD669A

Renesas Electronics

NPN

SINGLE

NO

140 MHz

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

30

SILICON

160 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

KA4L4L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

FN4L4L-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 21.36

e6

FA1L4ZL61-T1B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

KN4F3P-T2

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SA812R5M-A

Renesas Electronics

PNP

SINGLE

YES

180 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

HD1L2Q-T2

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

KN4F4M-T2

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

AQ1F3M

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.75 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

BIP General Purpose Small Signal

50

SILICON

20 V

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

TO-92

FA4F4M-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

KA4L4Z-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD2122LB

Renesas Electronics

NPN

SINGLE

NO

180 MHz

18 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

60

150 Cel

SILICON

160 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

BB1F3P-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

135

150 Cel

SILICON

25 V

SINGLE

R-PSIP-T3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.54

FA1F4ZL65-T1B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

FN4A4P-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN1F4Z-M64

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN4A4L-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SD787BTZ

Renesas Electronics

NPN

SINGLE

NO

100 MHz

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

16 V

BOTTOM

O-PBCY-T3

Not Qualified

FA4L3M-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

20

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e6

NOT SPECIFIED

NOT SPECIFIED

HD2A4A-T1-AZ

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

200

SILICON

HR1F3P-T1-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395