Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

GN4A4L

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.47

e0

GN4F3R

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 21.363

e0

2SD985-M-AZ

Renesas Electronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

2000

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FA4F3R-L

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

N0500S-T1-ATLM

Renesas Electronics

NPN

SINGLE

YES

80 MHz

.7 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

50 V

DUAL

R-PDSO-F3

FN1A4M-T1B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

KA4L4Z-T1

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FP1A4M-T2B-A

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

BA1F4Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

50 V

200 ns

6000 ns

SINGLE

R-PSIP-T3

Not Qualified

GN4A4P-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD780DW1-T2B-A

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

60 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

GA1L3Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SD794AP-AZ

Renesas Electronics

NPN

SINGLE

NO

60 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

160

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FB1A3M-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

NOT SPECIFIED

NOT SPECIFIED

FN1A4M-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

CA3096E

Renesas Electronics

NPN AND PNP

SEPARATE, 5 ELEMENTS

NO

335 MHz

.05 A

PLASTIC/EPOXY

SWITCHING

.7 V

THROUGH-HOLE

RECTANGULAR

5

16

IN-LINE

150

125 Cel

SILICON

35 V

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

MS-001BB

e0

2SA811AC18

Renesas Electronics

PNP

SINGLE

YES

90 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

450

SILICON

120 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

KN4A3Q

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 10

e0

2SB562C-E

Renesas Electronics

PNP

SINGLE

NO

350 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

120

SILICON

20 V

TIN COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e2

GA1F4Z-T2-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

KA4F4Z-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FN1L3M-L

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

FN1L3ZM37-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GN1A4M-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FA1F4N-L

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KA4F4N-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KA4A3Q-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FA4F4N-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA1L3N-T2

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GA4F3M-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

FN1F4ZM64-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SD780DW1

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

150 Cel

SILICON

60 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

GN1A4M-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SB637(K)

Renesas Electronics

PNP

SINGLE

NO

.1 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

160

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SA673ATZ

Renesas Electronics

PNP

SINGLE

NO

.5 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

60

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

GN4A4Z-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1L3ZM37-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD780AD52

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

80 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

GN1F4N-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB800FK-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

80 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BA1L4Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

SILICON

50 V

200 ns

6000 ns

SINGLE

R-PSIP-T3

Not Qualified

2SA743C

Renesas Electronics

PNP

SINGLE

NO

120 MHz

8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

50 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

N0800S-T1-AT-EK

Renesas Electronics

NPN

SINGLE

YES

100 MHz

.3 A

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

80 V

DUAL

R-PDSO-F3

FA4L4Z-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SB624BV4-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

25 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

FA3L4Z

Renesas Electronics

FP1L2Q-T1B-A

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

TIN BISMUTH

e6

FN1A4Z-M67

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

50 V

200 ns

6000 ns

DUAL

R-PDSO-G3

Not Qualified

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395