Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

GA1L3M-T1-AT

Renesas Electronics

FA1A3Q-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SD2263TZ

Renesas Electronics

NPN

SINGLE

NO

.5 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

25 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

KN4L3M-T1-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

FP1A4A-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.7 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

50

150 Cel

SILICON

25 V

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

NOT SPECIFIED

NOT SPECIFIED

HD1A4A-AY

Renesas Electronics

NPN

YES

2 W

1 A

1

BIP General Purpose Small Signal

80

SILICON

GA1L4ZL62-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

KA4L4K-T2-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FN1F4ZM65-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA1L4Z-L62

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

FA4F3R-T2B

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SA715C

Renesas Electronics

PNP

SINGLE

NO

160 MHz

10 W

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

35 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

GA4A4P-T1-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

TIN BISMUTH

e6

GA4F3R-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

95

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 4.7

e6

2SB548

Renesas Electronics

PNP

SINGLE

NO

70 MHz

10 W

.8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

KA4F4N-T2

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB647ATZ

Renesas Electronics

PNP

SINGLE

NO

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

60

SILICON

100 V

BOTTOM

O-PBCY-W3

Not Qualified

GN4L3M-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

HIT468-TZ-EQ

Renesas Electronics

NPN

SINGLE

NO

.8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

40

150 Cel

SILICON

25 V

BOTTOM

O-PBCY-T3

1

Not Qualified

NOT FOR AUTOMOTIVE OR INDUSTRIAL USE

2SB800FM-AZ

Renesas Electronics

PNP

SINGLE

YES

100 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

80 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

FA4A4P-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD756RF

Renesas Electronics

NPN

SINGLE

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

250

SILICON

120 V

BOTTOM

O-PBCY-W3

Not Qualified

2SA872ARR

Renesas Electronics

PNP

SINGLE

NO

.05 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

250

SILICON

120 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

FP1A4A-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

AA1L4ZK-T

Renesas Electronics

NPN

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FA4L4M-L-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KN4L4K-T2

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FA4A4L-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SD667ABTZ-E

Renesas Electronics

NPN

SINGLE

NO

140 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

150 Cel

SILICON

100 V

BOTTOM

O-PBCY-T3

Not Qualified

GN1A4P-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

AA1L4ZP(C)

Renesas Electronics

NPN

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

2SD2540

Renesas Electronics

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

3

SMALL OUTLINE

SINGLE

R-PSSO-F3

Not Qualified

GA1L3N-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4F4N-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN1F4ZM66-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FN4L4M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.47

e6

2SA812M4-T1B-A

Renesas Electronics

PNP

SINGLE

YES

180 MHz

.2 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FP1L2Q-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

FA1A4ZL68-T1B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

GA1A4Z

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SD788TZ

Renesas Electronics

NPN

SINGLE

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

FN1L3N

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 2.127

e0

FA1A4ZL69-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

2SB800FL-T2

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

HD2A4M

Renesas Electronics

NPN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

2 W

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

200

150 Cel

SILICON

70 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 1

2SB800FK-T2

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD789RR

Renesas Electronics

NPN

SINGLE

NO

1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

50 V

BOTTOM

O-PBCY-W3

Not Qualified

FN1F4ZM65-T1B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395