Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

KN4L3Z-T1

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HR1L3N-T2-AZ

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

BN1L3M-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

70

150 Cel

SILICON

50 V

500 ns

5000 ns

SINGLE

R-PSIP-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

GA4A4Z-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FB1F3P-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

135

SILICON

KN4A4L-T2-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SD2115S

Renesas Electronics

NPN

SINGLE

YES

18 W

2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

150

150 Cel

SILICON

60 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

FN1F4N-T2B-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD763

Renesas Electronics

NO

PLASTIC/EPOXY

WIRE

ROUND

3

CYLINDRICAL

BOTTOM

O-PBCY-W3

Not Qualified

GN4L3N-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

80

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 2.127

NOT SPECIFIED

NOT SPECIFIED

GN1A4ZM68-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

BRA143EMPTL

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

2SD666

Renesas Electronics

NO

PLASTIC/EPOXY

WIRE

ROUND

3

CYLINDRICAL

BOTTOM

O-PBCY-W3

Not Qualified

FA4A4M

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

35

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e0

FN4F3R-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FN1F4ZM66-L

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FA1F4M

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

90

150 Cel

SILICON

50 V

400 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO IS 1

e0

FA4A4Z-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

AA1F4Z-P

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

150 Cel

SILICON

50 V

200 ns

6000 ns

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR

TO-92

2SA743AB

Renesas Electronics

PNP

SINGLE

NO

120 MHz

8 W

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

KA4F3M-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

FN1A4P-T2B

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GA4F4Z-T1-AT

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FN4L3Z-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

TIN BISMUTH

e6

2SB562CTZ-E

Renesas Electronics

PNP

SINGLE

NO

350 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

120

SILICON

20 V

TIN OVER COPPER

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

HQ1L2Q-T1-AY

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

GN1A4ZM67-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SB624R2BV-A

Renesas Electronics

PNP

SINGLE

YES

160 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

25 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

HQ1F3M-AY

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

FN4L3N-A

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.2 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

100

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR

e6

GA4A4P-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

80

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 1

e6

AA1F4N

Renesas Electronics

NPN

NO

.3 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

FA1L4L-T1B

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN1F4ZM65-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

200

SILICON

KN4A4M-T1-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

TIN BISMUTH

e6

KN4A4L-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

FA1A4P-T2B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

KA4F4Z-T2-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA1L3N-T1

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FN4L4K-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

KN4L4M

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 1

e0

GA1F4Z-L64

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1A4ZM67-T2-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GN1L4Z

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

50 V

200 ns

6000 ns

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

GN4F4Z-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

FA1A4Z-L69

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

HR1A3M-T2-AY

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

GA1L3Z-L36

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395