Renesas Electronics Small Signal Bipolar Junction Transistors (BJT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FA4F3M-T1B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

8

SILICON

TIN BISMUTH

e6

FP1F3P-T1B-A

Renesas Electronics

PNP

YES

.2 W

.7 A

1

BIP General Purpose Small Signal

50

SILICON

TIN BISMUTH

e6

GN4L4Z-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

TIN BISMUTH

e6

2SA893A

Renesas Electronics

PNP

SINGLE

NO

120 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

250

150 Cel

SILICON

120 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SD780AD55

Renesas Electronics

NPN

SINGLE

YES

140 MHz

.3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

SILICON

80 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

e0

2SA673ADRF

Renesas Electronics

PNP

SINGLE

NO

120 MHz

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

160

150 Cel

SILICON

50 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

AA1A4Z-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

.1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

100

SILICON

50 V

200 ns

600 ns

BOTTOM

O-PBCY-T3

Not Qualified

BUILT-IN BIAS RESISTOR

TO-92

NOT SPECIFIED

NOT SPECIFIED

KA4L4M-T2-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SA673

Renesas Electronics

PNP

SINGLE

NO

.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

10

150 Cel

SILICON

35 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SD596R1DV-A

Renesas Electronics

NPN

SINGLE

YES

170 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

110

SILICON

25 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

FA1F4ZL64-T1B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

GA1A4ZL67-T2-A

Renesas Electronics

NPN

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

2SA844RR

Renesas Electronics

PNP

SINGLE

NO

.1 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

160

SILICON

55 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SA893ERR

Renesas Electronics

PNP

SINGLE

NO

120 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

400

SILICON

90 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

FN1A4ZM69-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FA4L4Z-A

Renesas Electronics

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

150 Cel

SILICON

50 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTANCE RATIO

e6

NOT SPECIFIED

NOT SPECIFIED

KN4F4N

Renesas Electronics

PNP

SINGLE WITH BUILT-IN RESISTOR

YES

.15 W

.1 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

BIP General Purpose Small Signal

95

150 Cel

SILICON

50 V

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

BUILT IN BIAS RESISTOR RATIO 2.136

e0

2SD2121LC

Renesas Electronics

NPN

SINGLE

NO

2.5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

100

150 Cel

SILICON

35 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

FN1A4Z-T1B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

FA1F4Z-T2B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

100

SILICON

2SD992M-Z

Renesas Electronics

NPN

YES

2 W

2 A

1

BIP General Purpose Small Signal

60

SILICON

KN4L3N-AT

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

KN4A3Q-T2

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

FA4L4Z-L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

135

SILICON

HQ1F3M-T2-AZ

Renesas Electronics

PNP

YES

2 W

2 A

1

BIP General Purpose Small Signal

50

SILICON

FA4A4L-T1B-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

20

SILICON

TIN BISMUTH

e6

GN1L4L-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN4L4L-T2

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

2SA811AC15-A

Renesas Electronics

PNP

SINGLE

YES

90 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

120 V

TIN BISMUTH

DUAL

R-PDSO-G3

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

FA4L4K-L-A

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN1A4P-T2-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SB561RR

Renesas Electronics

PNP

SINGLE

NO

.7 A

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

1

3

CYLINDRICAL

85

SILICON

20 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SD2228D42-T1-A

Renesas Electronics

NPN

SINGLE

YES

50 MHz

.15 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

110

150 Cel

SILICON

16 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

KA4A4M-T1-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SD2031BRF

Renesas Electronics

NPN

SINGLE

NO

140 MHz

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

60

SILICON

200 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

GN1L4M-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

GN1A4ZM69-T1-A

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

CE2A3Q-AZ

Renesas Electronics

NPN

NO

1 W

2 A

1

BIP General Purpose Small Signal

500

SILICON

BA1F4M

Renesas Electronics

NPN

NO

.25 W

.1 A

1

BIP General Purpose Small Signal

60

SILICON

GN1L3ZM38-T1

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

FA4F3P-T1B-AT

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

GN4A4P-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

2SD787C

Renesas Electronics

NPN

SINGLE

NO

100 MHz

.9 W

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

160

150 Cel

SILICON

16 V

BOTTOM

O-PBCY-T3

Not Qualified

GN4L4K-T1-AT

Renesas Electronics

PNP

YES

.15 W

.1 A

1

BIP General Purpose Small Signal

35

SILICON

2SA812M5-A

Renesas Electronics

PNP

SINGLE

YES

180 MHz

.2 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

50 V

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FA1A4P-L

Renesas Electronics

NPN

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

85

SILICON

HR1L2Q-T1-AZ

Renesas Electronics

PNP

YES

2 W

1 A

1

BIP General Purpose Small Signal

50

SILICON

FN1F4ZM66-T2B-A

Renesas Electronics

PNP

YES

.2 W

.1 A

1

BIP General Purpose Small Signal

300

SILICON

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395