Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
5 pF |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.31 W |
1 |
.154 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.154 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
.085 ohm |
3 A |
DUAL |
R-PDSO-F8 |
|||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
35 W |
1 |
11 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
TIN BISMUTH |
11 A |
1 |
e6 |
30 |
260 |
||||||||||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.6 W |
1 |
1.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
1.2 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
1.2 pF |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1 W |
1 |
2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
2 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
235 |
5 pF |
||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
1.2 pF |
|||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.1 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
.1 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
4 pF |
|||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.1 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
.1 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
15 W |
1 |
10 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
10 A |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
20 W |
1 |
1.5 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
1.5 A |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
26 W |
1 |
3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
3 A |
e6 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
6 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
35 pF |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.6 W |
1 |
1.6 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
Tin/Bismuth (Sn/Bi) |
1.6 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.8 W |
1 |
1.8 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
1.8 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.8 W |
1 |
1.7 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
1.7 A |
|||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
260 |
5 pF |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.25 W |
1 |
.07 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN SILVER COPPER NICKEL |
.07 A |
|||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
25 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
8 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
235 |
4 pF |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
135 Cel |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e0 |
4 pF |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
30 ohm |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
e0 |
4 pF |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
6 pF |
|||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1 W |
1 |
4.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
4.5 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e1 |
260 |
5 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
135 Cel |
SILICON |
MATTE TIN |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-226AA |
e3 |
4 pF |
|||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
2 W |
1 |
3.3 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
3.3 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
5 pF |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.05 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
5 pF |
|||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
1.2 pF |
|||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
135 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
1 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
10 pF |
|||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.6 W |
1 |
.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
.5 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
1.2 pF |
||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
35 W |
1 |
11 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
TIN BISMUTH |
11 A |
e6 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.07 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
.07 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
25 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
8 pF |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1 W |
1 |
4.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
4.5 A |
1 |
e6 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.