SINGLE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N3458

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N3993A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

150 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

3 pF

2N2500

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N3329

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

1000 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N2498

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

800 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

2N5359

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N4856A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

25 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

4 pF

2N3459

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

TIS58

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N3966

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

220 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.5 pF

3N158

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N3994A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

25 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

300 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

3.5 pF

2N5360

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

3N160

Texas Instruments

P-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.125 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.125 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

4 pF

A5T3824

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

CHOPPER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

250 ohm

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N2608

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

1000 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-18

NOT SPECIFIED

NOT SPECIFIED

2N6454

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

5 pF

3N155A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

300 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

3N156A

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

300 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N5358

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

175 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2 pF

3N156

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

35 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

600 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N4093

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

80 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

5 pF

3N164

Texas Instruments

P-CHANNEL

SINGLE

NO

.375 W

METAL

CHOPPER

30 V

WIRE

ROUND

ENHANCEMENT MODE

1

.05 A

4

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

300 ohm

.05 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.7 pF

A5T5461

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

800 ohm

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N3330

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

800 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

A5T6449

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

2N4861A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

3N170

Texas Instruments

N-CHANNEL

SINGLE

NO

.8 W

METAL

CHOPPER

25 V

WIRE

ROUND

ENHANCEMENT MODE

1

.03 A

4

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

200 ohm

.03 A

BOTTOM

O-MBCY-W4

SUBSTRATE

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

1.3 pF

2N3331

Texas Instruments

P-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

600 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N6451

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

LOW NOISE

TO-72

NOT SPECIFIED

NOT SPECIFIED

5 pF

2N2499

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

600 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW NOISE

TO-5

NOT SPECIFIED

NOT SPECIFIED

A8T6449

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-226AA

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

TIS74

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

40 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

2N3971

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

6 pF

2N2386

Texas Instruments

P-CHANNEL

SINGLE

NO

.5 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-5

NOT SPECIFIED

NOT SPECIFIED

A8T6450

Texas Instruments

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-226AA

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

CSD23381F4

Texas Instruments

SINGLE

YES

UNSPECIFIED

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2.3 A

GRID ARRAY

150 Cel

-55 Cel

NICKEL GOLD

2.3 A

BOTTOM

R-XBGA-N3

1

e4

30

260

CSD25481F4

Texas Instruments

P-CHANNEL

SINGLE

YES

.5 W

UNSPECIFIED

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

NICKEL GOLD

2.5 A

BOTTOM

R-XBGA-N3

1

e4

30

260

2N5461

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

800 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2 pF

CSD25481F4R

Texas Instruments

P-CHANNEL

SINGLE

YES

.5 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

NOT SPECIFIED

NOT SPECIFIED

2N3824

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

50 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

250 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

3 pF

CSD25211W1015

Texas Instruments

P-CHANNEL

SINGLE

YES

1 W

UNSPECIFIED

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.044 ohm

3.2 A

BOTTOM

R-XBGA-B6

1

e1

30

260

2N3822

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

CSD13381F4R

Texas Instruments

N-CHANNEL

SINGLE

YES

.5 W

1

2.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NOT SPECIFIED

NOT SPECIFIED

CSD17483F4R

Texas Instruments

N-CHANNEL

SINGLE

YES

.5 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

2N3821

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

CSD13303W1015

Texas Instruments

N-CHANNEL

SINGLE

YES

1.65 W

UNSPECIFIED

12 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

31 A

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.023 ohm

3.5 A

BOTTOM

R-XBGA-B6

1

e1

30

260

CSD25213W10

Texas Instruments

P-CHANNEL

SINGLE

YES

1 W

UNSPECIFIED

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN SILVER COPPER

.067 ohm

1.6 A

BOTTOM

S-XBGA-B4

1

e1

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.