SINGLE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

LSK189-SOT-23

Linear Integrated Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

3 pF

NTMFS4C08NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

25.5 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

ZVN0124A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

.16 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

16 ohm

.16 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

7 pF

ZVN0545ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

50 ohm

.09 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

J176D74Z

National Semiconductor

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

250 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J176_D74Z

Onsemi

P-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

250 ohm

BOTTOM

O-PBCY-T3

TO-92

e3

JANTX2N4416A

Defense Logistics Agency

N-CHANNEL

SINGLE

NO

METAL

AMPLIFIER

35 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-MBCY-W3

Not Qualified

TO-72

MIL-19500/428E

MMBF5460

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2 pF

2N4338

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

TIN LEAD

2500 ohm

BOTTOM

O-MBCY-W3

1

GATE

LOW NOISE

TO-206AA

e0

40

260

3 pF

BFR30,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

BSS84W

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.13 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

10 ohm

.13 A

DUAL

R-PDSO-G3

e0

12 pF

IRF7807VTRPBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.3 A

1

MMBF5462

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2 pF

NVR5198NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

1

2.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.2 A

1

e3

30

260

ZVP3306ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

14 ohm

.16 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP3306ASTZ

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

14 ohm

.16 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

J113-D74Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

J113_D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

J113D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NTTFS4C25NTAG

Onsemi

N-CHANNEL

SINGLE

YES

20.2 W

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

27 A

1

e3

30

260

458

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

TO-92

PN4091

National Semiconductor

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

Tin/Lead (Sn/Pb)

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

ZVN4210ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.8 ohm

.45 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

260

ZVN4210ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

1.8 ohm

.45 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2SK209-GR

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

TO-236

e0

MCH3478-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1.2 W

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2 A

1

e6

30

260

2N4391PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

175 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

30 ohm

BOTTOM

O-MBCY-W3

TO-18

e3

3.5 pF

AUIRLL014NTR

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.1 W

1

2.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.8 A

1

BF861A,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BSS123TC

Zetex Plc

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

4 pF

MMBT7002K

Diotec Semiconductor Ag

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

10

260

NSVJ3910SB3T1G

Onsemi

N-CHANNEL

SINGLE

YES

.4 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.4 W

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

LOW NOISE

e6

30

260

AEC-Q101

NTNS3A65PZT5G

Onsemi

P-CHANNEL

SINGLE

YES

.218 W

1

.281 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.281 A

1

e4

30

260

TIS75

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

60 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

ZVN3310ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

10 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N5462

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

400 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N7002K-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.35 W

1

.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.3 A

2SK118

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e0

2SK118-O

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

AUIRLL2705TR

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.1 W

1

5.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

1

BF861A

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.7 pF

BFT46,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

1.5 pF

BS170/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BS270/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.4 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSS123ATC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

10

260

DMG6402LVT-7

Diodes Incorporated

N-CHANNEL

SINGLE

YES

1.75 W

1

6 A

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.03 ohm

6 A

1

e3

30

260

DMP3028LFDE-13

Diodes Incorporated

P-CHANNEL

SINGLE

YES

2.03 W

1

6.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6.8 A

1

e3

30

260

DMP4025SFG-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.95 W

1

7.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7.2 A

1

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.