SINGLE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5457/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2SK932-23-TB-E

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

30

260

3 pF

SI4435DY-REVA

Vishay Siliconix

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.035 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

BSR57

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

40 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

5 pF

BSS84TA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.13 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMBF4393,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

100 ohm

.003 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

3.5 pF

LNTA7002NT1G

Leshan Radio

N-CHANNEL

SINGLE

YES

.3 W

1

.154 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.154 A

ZVP3310F

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.33 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.075 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

20 ohm

.075 A

DUAL

R-PDSO-G3

Not Qualified

e3

30

260

5 pF

SI4435DY-REVA-E3

Vishay Siliconix

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.035 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e3

2SK197YC

Hitachi

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

.02 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK197YETL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

2N5457G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

40

260

3 pF

CPH3910-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.4 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.4 W

150 Cel

SILICON

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

e6

30

260

2.3 pF

LNTA4001NT1G

Leshan Radio

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.238 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.238 A

1

e3

260

2N5457/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457/D27Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457_D26Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

3 pF

2N5457_D27Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

3 pF

2N4391

Texas Instruments

N-CHANNEL

SINGLE

NO

1.8 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

30 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

BSR58,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

.005 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

SFT1452-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

26 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

BSR57,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

40 ohm

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

ZVNL120AM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.18 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PMBFJ177,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

MMBFJ111

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

Tin (Sn)

30 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

5 pF

BFR31

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

1.5 pF

SST201SOT-233LROHS

Linear Integrated Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

135 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

ZVN3306ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP3306A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.16 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

14 ohm

.16 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

30

260

8 pF

MMBF5434

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

10 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

15 pF

ZVP3310FTC

Zetex Plc

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.075 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

5 pF

BSR56,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

25 ohm

.02 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

J112_D26Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

J112-D26Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

J112D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

ZVN3306ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

5 ohm

.27 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVN4206ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZVN4206ASTOA

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVNL110ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4.5 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

PMBFJ109,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

12 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

15 pF

ZVN3310A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

30

260

5 pF

BS170FTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.15 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVNL110A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.32 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.32 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

e3

30

260

8 pF

2N4393-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

-55 Cel

Matte Tin (Sn)

100 ohm

BOTTOM

O-MBCY-W3

1

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e3

30

260

3.5 pF

ZVN4210A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.45 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

.45 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

30

260

12 pF

2N5460G

Onsemi

P-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

135 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

2 pF

MMBF5103

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

SMMBFJ175LT1G

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.225 W

150 Cel

SILICON

-55 Cel

MATTE TIN

125 ohm

.06 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

5.5 pF

AEC-Q101

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.