Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
3 pF |
|||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.2 W |
150 Cel |
SILICON |
TIN BISMUTH |
.05 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e6 |
30 |
260 |
3 pF |
||||||||||||||||||||||
Vishay Siliconix |
P-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.035 ohm |
8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
40 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.13 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
10 ohm |
.13 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
100 ohm |
.003 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
3.5 pF |
||||||||||||||||||||
|
Leshan Radio |
N-CHANNEL |
SINGLE |
YES |
.3 W |
1 |
.154 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.154 A |
||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.075 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
20 ohm |
.075 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
Vishay Siliconix |
P-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.035 ohm |
8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e3 |
|||||||||||||||||||||||||||||
Hitachi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
PLASTIC/EPOXY |
AMPLIFIER |
18 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
.02 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
18 V |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
SILICON |
.02 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e1 |
40 |
260 |
3 pF |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
.4 W |
150 Cel |
SILICON |
TIN BISMUTH |
.05 A |
DUAL |
R-PDSO-G3 |
1 |
e6 |
30 |
260 |
2.3 pF |
|||||||||||||||||||||||
|
Leshan Radio |
N-CHANNEL |
SINGLE |
YES |
.3 W |
ENHANCEMENT MODE |
1 |
.238 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.238 A |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
3 pF |
|||||||||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
3 pF |
|||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
3 pF |
|||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
MATTE TIN |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
3 pF |
|||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
CHOPPER |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
30 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
TO-18 |
NOT SPECIFIED |
NOT SPECIFIED |
3.5 pF |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
60 ohm |
.005 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
26 W |
1 |
3 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
3 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
40 ohm |
.01 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
10 ohm |
.18 A |
SINGLE |
R-PSSO-G3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
TIN |
300 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
.225 W |
150 Cel |
SILICON |
Tin (Sn) |
30 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.3 W |
PLASTIC/EPOXY |
AMPLIFIER |
25 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
.01 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
1.5 pF |
||||||||||||||||||||
|
Linear Integrated Systems |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
135 Cel |
SILICON |
DUAL |
R-PDSO-G3 |
Not Qualified |
|||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
5 ohm |
.27 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.16 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
14 ohm |
.16 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
e3 |
30 |
260 |
8 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
10 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
15 pF |
||||||||||||||||||||||
|
Zetex Plc |
P-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
20 ohm |
.075 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
40 |
260 |
5 pF |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
25 ohm |
.02 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN SILVER COPPER |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
5 pF |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
MATTE TIN |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
5 pF |
||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Matte Tin (Sn) |
5 ohm |
.27 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
1.5 ohm |
.6 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Zetex Plc |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
MATTE TIN |
1.5 ohm |
.6 A |
SINGLE |
R-PSIP-W3 |
1 |
Not Qualified |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
4.5 ohm |
.32 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
12 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
15 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
10 ohm |
.2 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
5 ohm |
.15 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
.7 W |
PLASTIC/EPOXY |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.32 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.32 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
LOW THRESHOLD |
e3 |
30 |
260 |
8 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
100 ohm |
BOTTOM |
O-MBCY-W3 |
1 |
GATE |
Not Qualified |
LOW INSERTION LOSS |
TO-206AA |
e3 |
30 |
260 |
3.5 pF |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.45 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.5 ohm |
.45 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
30 |
260 |
12 pF |
||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
135 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
2 pF |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
.225 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
125 ohm |
.06 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
5.5 pF |
AEC-Q101 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.