Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
.36 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
10 ohm |
.12 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOW THRESHOLD |
TO-236AB |
e3 |
260 |
10 pF |
|||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.45 ohm |
2 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
10 |
260 |
|||||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.013 ohm |
12 A |
DUAL |
R-PDSO-G8 |
295 pF |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.021 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
600 ohm |
.021 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
1.5 pF |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.23 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3.5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
260 |
5.9 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
240 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
11 ohm |
.27 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
4.1 pF |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.7 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.19 ohm |
2.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
25 pF |
|||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.039 ohm |
5.3 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
120 pF |
||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
6 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
35 pF |
||||||||||||||||||||||||||||
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
6 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
35 pF |
|||||||||||||||||||||||||||||
|
Panjit International |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
ULTRA-LOW RESISTANCE |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.14 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
1 |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
9 pF |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.021 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
500 ohm |
.021 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e3 |
1.5 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
45 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.8 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.046 ohm |
4.1 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Diotec Semiconductor Ag |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.055 ohm |
1.9 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
10 |
260 |
41 pF |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0108 ohm |
.0088 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.25 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
5 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
260 |
10 pF |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Pure Matte Tin (Sn) |
.1 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
30 |
260 |
20 pF |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
4.5 pF |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
16.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
44 ns |
-55 Cel |
75 ns |
.061 ohm |
6.9 A |
DUAL |
R-PDSO-G6 |
MO-193AA |
NOT SPECIFIED |
NOT SPECIFIED |
115 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.3 ohm |
1.4 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.9 ohm |
.98 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
42 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.62 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.24 ohm |
2.4 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
23.2 pF |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.261 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
ULTRA-LOW RESISTANCE |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.313 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.76 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.36 ohm |
.76 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
5.2 ohm |
.19 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
ROHM |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.07 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
6 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
500 ohm |
.021 A |
DUAL |
R-PDSO-G3 |
1.5 pF |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-65 Cel |
MATTE TIN |
2 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
50 mJ |
1.5 A |
4 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
15 pF |
|||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.3 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.22 ohm |
1.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e3 |
40 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.71 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.057 ohm |
2.6 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.235 ohm |
.8 A |
DUAL |
R-PDSO-G3 |
6 pF |
|||||||||||||||||||||||||||
Supertex |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
6 ohm |
.175 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
10 pF |
|||||||||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
6 ohm |
.175 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
10 pF |
||||||||||||||||||||||||
|
Micro Commercial Components |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.5 ohm |
.22 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
240 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
12 ohm |
.2 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
CMOS COMPATIBLE |
TO-243AA |
e3 |
30 |
260 |
15 pF |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
5 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
e3 |
4.4 pF |
AEC-Q101 |
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|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.075 ohm |
3.6 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
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|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9 A |
74 mJ |
3 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.11 ohm |
3 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
TO-261AA |
e3 |
30 |
260 |
155 pF |
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|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2 ohm |
.5 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
16 pF |
AEC-Q101 |
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|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.9 ohm |
1.22 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
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|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.97 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) |
.06 ohm |
5.97 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
30 |
260 |
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|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.6 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.126 ohm |
3.8 A |
DUAL |
R-PDSO-G6 |
1 |
MO-193AA |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
14 pF |
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|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
19.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.0098 ohm |
13 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.23 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
4.5 pF |
AEC-Q101 |
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|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
240 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
10 ohm |
.19 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
20 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.