SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMV48XPA

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.055 ohm

3.5 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

SI2328DS-T1-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.25 ohm

1.15 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

SI4056ADY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0292 ohm

8.3 A

DUAL

R-PDSO-G8

7.2 pF

TPN1600ANH,L1Q(M

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

36 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.016 ohm

17 A

DUAL

S-PDSO-F8

DRAIN

30

260

50 pF

VN0300L-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

.64 A

BOTTOM

O-PBCY-T3

TO-92

NOT SPECIFIED

NOT SPECIFIED

50 pF

ZXMN3F30FHTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.047 ohm

3.8 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2N7002F,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.475 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

TIN

2 ohm

.475 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

10 pF

AO3406L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.065 ohm

DUAL

R-PDSO-G3

TO-236

NOT SPECIFIED

NOT SPECIFIED

BSS138D87Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.22 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.22 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

10 pF

BSS138/D87Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.22 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

10 pF

BSS315PH6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

1.5 A

DUAL

R-PDSO-G3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

40

260

84 pF

DMP4013LFGQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.013 ohm

10.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

FDC645N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.03 ohm

.0055 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

PMV27UPEAR

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.032 ohm

4.5 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMV35EPER

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.045 ohm

4.2 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

30

260

IEC-60134

SQ3461EV-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

14 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

85 ns

-55 Cel

213 ns

.025 ohm

8 A

DUAL

R-PDSO-G6

MO-193AA

NOT SPECIFIED

NOT SPECIFIED

620 pF

AEC-Q101

TP0606N3-G-P003

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3.5 ohm

.32 A

BOTTOM

O-PBCY-T3

TO-92

e3

35 pF

TP2104N3-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.175 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW THRESHOLD

TO-92

e3

10 pF

ZXM64P03XTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.075 ohm

3.8 A

DUAL

S-PDSO-G8

1

Not Qualified

LOW THRESHOLD

MO-187AA

e3

260

BSH205,215

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.417 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.5 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

BSS119NH6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

e3

40

260

3.1 pF

AEC-Q101

BSS83

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.23 W

PLASTIC/EPOXY

SWITCHING

10 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

Tin (Sn)

120 ohm

.05 A

DUAL

R-PDSO-G4

1

SUBSTRATE

Not Qualified

e3

30

260

DMN67D7L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.57 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.21 A

DUAL

R-PDSO-G3

1

e3

260

FDS6576

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

11 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDS8817NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.007 ohm

15 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

300 pF

IRLML6302PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.78 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.54 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

.78 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

28 pF

PMV40UN,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.9 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.047 ohm

4.9 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

SI4463BDY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.011 ohm

9.8 A

DUAL

R-PDSO-G8

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

BSN20BK

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0032 ohm

.265 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

7 pF

IEC-60134

BSS123Q-7-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.17 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

6 pF

AEC-Q101

DMN2450UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.4 ohm

1 A

BOTTOM

R-PBCC-N3

1

DRAIN

e4

260

7.3 pF

JANSR2N7626UBC

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

.53 A

DUAL

R-XDSO-N3

Qualified

e0

MIL-19500; RH - 100K Rad(Si)

NTMD4820NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.02 ohm

4.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

SI3440DV-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.14 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.375 ohm

1.2 A

DUAL

R-PDSO-G6

1

Not Qualified

MO-193C

e3

30

260

SQ1431EH-T1-GE3

Vishay Siliconix

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.175 ohm

3 A

DUAL

R-PDSO-G6

Not Qualified

35 pF

AO4485L

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.015 ohm

10 A

DUAL

R-PDSO-G8

180 pF

DMN2004WK-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.54 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.54 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

20 pF

AEC-Q101

DMN2065UWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.065 ohm

2.8 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMN24H11DSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

.27 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

4.1 pF

AEC-Q101

FDT86244

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.8 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.128 ohm

2.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

260

5 pF

IRF8113TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0056 ohm

17.2 A

DUAL

R-PDSO-G8

1

MS-012AA

250 pF

MMBF0201NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

NX138BKR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.8 ohm

.265 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMZB390UNEYL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.47 ohm

.9 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

RZM002P02T2L

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

1.2 ohm

.2 A

DUAL

R-PDSO-F3

1

Not Qualified

e2

10

260

SI4431CDY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.032 ohm

9 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

SSM3K56FS,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.235 ohm

.8 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

6 pF

TN0620N3-GP003

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.25 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.