.4 W Small Signal Field Effect Transistors (FET) 174

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N7000

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

30

240

5 pF

2N7002DWQ-7-F

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.23 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.23 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

2N7000TA

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

1

.2 A

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

5 ohm

.2 A

e3

2N7000_D26Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

2N7000-D26Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

2N7000/D26Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

2N7000BU

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

e3

2N7002DWQ-13-F

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.23 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.23 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

2N7000_D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

2N7000-D74Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

2N7000/D74Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

NTR4502PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.95 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.2 ohm

1.13 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

NTR1P02T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

NTR1P02LT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.22 ohm

1.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

NTJD1155LT1G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.175 ohm

1.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

DMN65D8LDW-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.2 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

8 ohm

.15 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

2SK170-BL

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK170-GR

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2N7002DWA-7

Diodes Incorporated

N-CHANNEL

YES

.4 W

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.2 A

1

e3

30

260

CPH3910-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.4 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.4 W

150 Cel

SILICON

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

e6

30

260

2.3 pF

VN2222LLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.099 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

7.5 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

10

260

5 pF

J112_D26Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

J112-D26Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

DMN5L06DMK-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.305 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.305 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

5 pF

PMGD280UN,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.87 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.34 ohm

.87 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2SK170

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

NTR1P02LT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.22 ohm

1.3 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

DMN65D8LDWQ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

8 ohm

.15 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

2 pF

AEC-Q101; MIL-STD-202

NVR1P02T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.18 ohm

1 A

DUAL

R-PDSO-G3

1

TO-236

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

J111-D26Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

J111_D26Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

J113-D74Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

J113_D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

NTJD1155LT2G

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.175 ohm

1.3 A

DUAL

R-PDSO-G6

1

e3

30

260

DMN2005LP4K-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3.5 ohm

.3 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

NTJD1155LT1

Onsemi

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

.4 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.175 ohm

1.3 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

DMP56D0UV-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.16 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.16 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

NSVJ3910SB3T1G

Onsemi

N-CHANNEL

SINGLE

YES

.4 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.4 W

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

LOW NOISE

e6

30

260

AEC-Q101

2N7000/D75Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

2N7000-D75Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

2N7000D75Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

DMP2004VK-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.53 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.9 ohm

.53 A

DUAL

R-PDSO-F6

1

Not Qualified

ESD PROTECTION, LOW THRESHOLD

e3

30

260

20 pF

NTR4502PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.95 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.2 ohm

1.95 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

30

235

VN0610LLRLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.19 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.19 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

5 pF

2SK369-BL

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

RV2C014BCT2CL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.3 ohm

1.4 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

10

260

17 pF

2SK389

Toshiba

N-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

2SJ74

Toshiba

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.