Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.125 ohm |
3.6 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
5.3 pF |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.021 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
500 ohm |
.021 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e3 |
260 |
1.5 pF |
||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.235 ohm |
.8 A |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
6 pF |
|||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.9 ohm |
.52 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
.021 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
500 ohm |
.021 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
260 |
1.5 pF |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.04 ohm |
2.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
1.6 ohm |
.33 A |
DUAL |
R-PDSO-F6 |
1 |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
4 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||||
|
Nexperia |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
1.6 ohm |
.33 A |
DUAL |
R-PDSO-F6 |
LOGIC LEVEL COMPATIBLE |
4 pF |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0298 ohm |
5.5 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.88 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
6 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
e3 |
260 |
||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.18 ohm |
2.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
19.5 pF |
||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.105 ohm |
3.5 A |
BOTTOM |
R-PBGA-B3 |
1 |
e4 |
30 |
260 |
16.6 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.75 A |
6 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.55 ohm |
.75 A |
BOTTOM |
R-PBCC-N6 |
1 |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
20 pF |
||||||||||||||||||
|
Panjit International |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.6 ohm |
.5 A |
DUAL |
R-PDSO-G3 |
e3 |
40 |
260 |
5 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.41 A |
3 |
CHIP CARRIER |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.21 ohm |
1.41 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
.5 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.1 ohm |
1.2 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
45 pF |
MIL-STD-202 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.5 W |
150 Cel |
SILICON |
-55 Cel |
TIN |
.057 ohm |
2.3 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
17 pF |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
6 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
LOGIC LEVEL COMPATIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
3.1 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
6 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
e3 |
260 |
||||||||||||||||||||||||
Tt Electronics Plc |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
.5 W |
CERAMIC, METAL-SEALED COFIRED |
90 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
5 ohm |
2 A |
DUAL |
R-CDSO-N6 |
Not Qualified |
HIGH RELIABILITY |
e0 |
10 pF |
||||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
.5 W |
200 Cel |
SILICON |
-65 Cel |
75 ohm |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-206AA |
NOT SPECIFIED |
NOT SPECIFIED |
7 pF |
MIL-19500 |
||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4.7 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
.7 pF |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Matte Tin (Sn) |
1 |
e3 |
|||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Matte Tin (Sn) |
1 |
e3 |
|||||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
-55 Cel |
TIN LEAD |
150 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Not Qualified |
LOW INSERTION LOSS |
TO-206AA |
e0 |
7 pF |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.3 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
260 |
3 pF |
|||||||||||||||||||
|
Advanced Linear Devices |
N-CHANNEL |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
10.6 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
4 |
16 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
70 Cel |
SILICON |
0 Cel |
.08 A |
DUAL |
R-PDSO-G16 |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE |
YES |
.5 W |
1 |
1.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
1.5 A |
1 |
260 |
||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.7 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.5 ohm |
.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
Linear Integrated Systems |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
.5 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
2 |
6 |
SMALL OUTLINE |
FET General Purpose Small Signal |
JUNCTION |
.5 W |
150 Cel |
SILICON |
-55 Cel |
DUAL |
R-PDSO-G6 |
3 pF |
|||||||||||||||||||||||||||
|
Linear Integrated Systems |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.5 W |
UNSPECIFIED |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
2 |
6 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
.5 W |
150 Cel |
SILICON |
-55 Cel |
BOTTOM |
O-XBCY-W6 |
TO-71 |
3 pF |
||||||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
.5 W |
200 Cel |
SILICON |
-65 Cel |
TIN LEAD |
175 ohm |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-206AA |
e0 |
7 pF |
MIL-19500 |
||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
.5 W |
200 Cel |
SILICON |
-65 Cel |
Tin/Lead (Sn/Pb) |
75 ohm |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-206AA |
e0 |
7 pF |
MIL-19500 |
||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
.5 W |
200 Cel |
SILICON |
-65 Cel |
75 ohm |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-206AA |
7 pF |
MIL-19500 |
||||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
SINGLE |
NO |
.5 W |
METAL |
30 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
.5 W |
200 Cel |
SILICON |
-65 Cel |
TIN LEAD |
175 ohm |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
TO-206AA |
e0 |
7 pF |
MIL-19500 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.23 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
4.5 pF |
||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.14 ohm |
1.5 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
11 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
Texas Instruments |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BUTT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.5 A |
3 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.174 ohm |
2.5 A |
BOTTOM |
R-PBGA-B3 |
1 |
ULTRA LOW RESISTANCE |
e4 |
30 |
260 |
||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
YES |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
YES |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
P-CHANNEL |
YES |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.39 ohm |
.8 A |
DUAL |
R-PDSO-F3 |
1 |
260 |
10 pF |
|||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
.21 ohm |
3 A |
SINGLE |
R-PSSO-F3 |
1 |
DRAIN |
Not Qualified |
e2 |
10 |
260 |
|||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
N-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
1.8 ohm |
.0006 A |
SINGLE |
R-PSSO-F3 |
DRAIN |
Not Qualified |
e0 |
35 pF |
||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0021 ohm |
.25 A |
DUAL |
R-PDSO-G3 |
2 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.