.5 W Small Signal Field Effect Transistors (FET) 317

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

CSD25501F3T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3.6 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.125 ohm

3.6 A

BOTTOM

R-PBGA-B3

1

e4

30

260

5.3 pF

BSS126E6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

500 ohm

.021 A

DUAL

R-PDSO-G3

Not Qualified

e3

260

1.5 pF

SSM3K56FS

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.235 ohm

.8 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

6 pF

BSH202,215

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.9 ohm

.52 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

BSS126L6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.021 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

500 ohm

.021 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

1.5 pF

FDN372S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

2.6 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

NX1029X

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.6 ohm

.33 A

DUAL

R-PDSO-F6

1

LOGIC LEVEL COMPATIBLE

e3

30

260

4 pF

AEC-Q101; IEC-60134

NX1029XH

Nexperia

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.6 ohm

.33 A

DUAL

R-PDSO-F6

LOGIC LEVEL COMPATIBLE

4 pF

AEC-Q101; IEC-60134

SSM3J133TU,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0298 ohm

5.5 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

BSD840NH6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.88 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

3.5 A

DUAL

R-PDSO-G6

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSS123K-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.23 A

DUAL

R-PDSO-G3

e3

260

CSD17382F4

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.18 ohm

2.3 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

19.5 pF

CSD23382F4

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

12 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.105 ohm

3.5 A

BOTTOM

R-PBGA-B3

1

e4

30

260

16.6 pF

DMC2004LPK-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

.75 A

6

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.55 ohm

.75 A

BOTTOM

R-PBCC-N6

1

Not Qualified

HIGH RELIABILITY

e4

30

260

20 pF

PJA138K_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

.5 A

DUAL

R-PDSO-G3

e3

40

260

5 pF

DMN1150UFB-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.41 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.21 ohm

1.41 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMN2112SN-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.1 ohm

1.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

45 pF

MIL-STD-202

BSL306NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

TIN

.057 ohm

2.3 A

DUAL

R-PDSO-G6

1

e3

17 pF

AEC-Q101

BSS119NH6433XTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

6 ohm

.17 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

3.1 pF

AEC-Q101

BSS123K-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.23 A

DUAL

R-PDSO-G3

e3

260

HCT802

Tt Electronics Plc

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.5 W

CERAMIC, METAL-SEALED COFIRED

90 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

2 A

DUAL

R-CDSO-N6

Not Qualified

HIGH RELIABILITY

e0

10 pF

MQ2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

NOT SPECIFIED

NOT SPECIFIED

7 pF

MIL-19500

SSM3K72CFS,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.17 A

DUAL

R-PDSO-G3

.7 pF

2N5114-E3

Vishay Intertechnology

P-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N5115-E3

Vishay Intertechnology

P-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N5116

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

.5 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

-55 Cel

TIN LEAD

150 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e0

7 pF

2N7002DWL6327

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.3 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

3 pF

ALD810025SCL

Advanced Linear Devices

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

10.6 V

GULL WING

RECTANGULAR

DEPLETION MODE

4

16

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

70 Cel

SILICON

0 Cel

.08 A

DUAL

R-PDSO-G16

BSS314PEL6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

.5 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

1

260

DMP2012SN-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

.7 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

LSK489SOT-236LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.5 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

DUAL

R-PDSO-G6

3 pF

LSK489TO-716LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.5 W

UNSPECIFIED

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

BOTTOM

O-XBCY-W6

TO-71

3 pF

MQ2N5116

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

TIN LEAD

175 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

MV2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

MX2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

7 pF

MIL-19500

MX2N5116

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

TIN LEAD

175 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

SN7002WL6433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.23 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

4.5 pF

BSD314SPEH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.14 ohm

1.5 A

DUAL

R-PDSO-G6

1

e3

11 pF

AEC-Q101

CSD25481F4T

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BUTT

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD

.174 ohm

2.5 A

BOTTOM

R-PBGA-B3

1

ULTRA LOW RESISTANCE

e4

30

260

MQ2N5116UB

Microchip Technology

P-CHANNEL

YES

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

MV2N5116UB

Microchip Technology

P-CHANNEL

YES

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

MX2N5116UB

Microchip Technology

P-CHANNEL

YES

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

SSM3J56MFV,L3F

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.39 ohm

.8 A

DUAL

R-PDSO-F3

1

260

10 pF

RHP030N03T100

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.21 ohm

3 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e2

10

260

2N3955

Texas Instruments

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

2N5907

Analog Devices

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

2SK1079

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

1.8 ohm

.0006 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e0

35 pF

SSM3J35AFS,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0021 ohm

.25 A

DUAL

R-PDSO-G3

2 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.