Infineon Technologies - BSS119NH6433XTMA1

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BSS119NH6433XTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS119NH6433XTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): 3.1 pF;
Datasheet BSS119NH6433XTMA1 Datasheet
In Stock725
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .17 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 6 ohm
Maximum Feedback Capacitance (Crss): 3.1 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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