NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N3824

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

CHOPPER

50 V

WIRE

ROUND

DEPLETION MODE

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

250 ohm

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

3 pF

2N3822

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N3821

Texas Instruments

N-CHANNEL

SINGLE

NO

.3 W

METAL

WIRE

ROUND

1

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

2N4858A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

METAL

CHOPPER

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

60 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

3.5 pF

AD832

Analog Devices

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

AD833A

Analog Devices

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

2N5906

Analog Devices

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

2N5908

Analog Devices

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

AD833

Analog Devices

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

2N5905

Analog Devices

N-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

AD840

Analog Devices

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

ADG466BN

Analog Devices

N-CHANNEL

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

8

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

80 ohm

.02 A

DUAL

R-PDIP-T8

Not Qualified

e0

J109-D26Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

12 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

J110G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN SILVER COPPER

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

15 pF

J110RLRA

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN LEAD

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

15 pF

J110RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN SILVER COPPER

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

15 pF

J110

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN LEAD

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

15 pF

MPF4392RLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

3.5 pF

MPF910RLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPF6660RLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPF4393RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

3.5 pF

MPF930A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

SFT1452-W

Onsemi

N-CHANNEL

SINGLE

NO

26 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3 A

e6

SFT1443

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.225 ohm

9 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

J111RLRA

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

5 pF

MPF930RLRM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPF6661RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

90 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

VN0610LLRL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

5 ohm

.19 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5 pF

MPF910

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

J112RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

MPF4856RL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

8 pF

MPF4856RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

8 pF

J111RLRPG

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

PN4117A

Onsemi

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

ULTRA LOW INPUT CURRENT

TO-92

e0

1.5 pF

2N5639RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

4 pF

FSEZ1216BNY

Onsemi

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

8

IN-LINE

150 Cel

MATTE TIN

DUAL

R-PDIP-T8

Not Qualified

MS-001BA

e3

MPF6660

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

3 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

MPF4856RLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

8 pF

SFT1342-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.096 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

2N5640RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

4 pF

PN5434

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.35 W

150 Cel

SILICON

-55 Cel

10 ohm

BOTTOM

O-PBCY-T3

TO-92

15 pF

PN5432

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.35 W

150 Cel

SILICON

-55 Cel

5 ohm

BOTTOM

O-PBCY-T3

TO-92

15 pF

J305

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

J111-D74Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

J107

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

8 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

35 pF

J304

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

SSN1N45B

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.25 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

8.5 pF

MPF930RLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.