Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
5 ohm |
.31 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3 ohm |
.35 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
8 pF |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.3 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.35 ohm |
1.2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
65 pF |
||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
|||||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.325 W |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
2 |
8 |
IN-LINE |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
TIN LEAD |
DUAL |
R-PDIP-T8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.3 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.325 W |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
2 |
8 |
IN-LINE |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
TIN LEAD |
DUAL |
R-PDIP-T8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SEPARATE, 2 ELEMENTS |
NO |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
2 |
7 |
IN-LINE |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T7 |
Not Qualified |
LOW NOISE |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMMON SUBSTRATE, 2 ELEMENTS |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
2 |
7 |
IN-LINE |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
ZIG-ZAG |
R-PZIP-T7 |
Not Qualified |
LOW NOISE |
e0 |
|||||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.15 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
20 ohm |
.15 A |
BOTTOM |
O-MBCY-W3 |
TO-18 |
e0 |
15 pF |
|||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
NO |
.375 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
AMPLIFIER |
20 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
SILICON |
BOTTOM |
O-MBCY-W4 |
ISOLATED |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
16 pF |
||||||||||||||||||||||||
National Semiconductor |
P-CHANNEL |
NO |
.31 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.38 ohm |
2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.8 ohm |
.49 A |
DUAL |
R-PDIP-T3 |
1 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
.36 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3 pF |
|||||||||||||||||||||||||||
National Semiconductor |
P-CHANNEL |
NO |
.3 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
|||||||||||||||||||||||||||||||||||||||||||
National Semiconductor |
P-CHANNEL |
NO |
.2 W |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
METAL |
SWITCHING |
25 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
4 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
300 ohm |
.03 A |
BOTTOM |
O-MBCY-W4 |
Not Qualified |
TO-206AF |
1.3 pF |
||||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
SWITCHING |
40 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
175 Cel |
SILICON |
BOTTOM |
O-MBCY-W4 |
ISOLATED |
Not Qualified |
LOW NOISE |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
|||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
NO |
.25 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
National Semiconductor |
P-CHANNEL |
NO |
.31 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
135 Cel |
SILICON |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
4 pF |
||||||||||||||||||||||||||||
Analog Devices |
N-CHANNEL |
NO |
.5 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSIP-T3 |
Not Qualified |
LOW NOISE |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
18 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW NOISE |
TO-92 |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
125 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||
Texas Instruments |
N-CHANNEL |
SINGLE |
NO |
.8 W |
METAL |
CHOPPER |
25 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.03 A |
4 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
200 ohm |
.03 A |
BOTTOM |
O-MBCY-W4 |
SUBSTRATE |
Not Qualified |
TO-72 |
NOT SPECIFIED |
NOT SPECIFIED |
1.3 pF |
|||||||||||||||||||||
Intersil |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.375 W |
METAL |
SWITCHING |
40 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.05 A |
4 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
250 ohm |
.03 A |
BOTTOM |
O-MBCY-W4 |
TO-72 |
e0 |
||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
1.8 W |
200 Cel |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-MBCY-W3 |
GATE |
Qualified |
TO-206AA |
e0 |
8 pF |
MIL |
||||||||||||||||||||||||
Motorola |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6.25 W |
METAL |
SWITCHING |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
6.25 W |
150 Cel |
SILICON |
TIN LEAD |
1.7 ohm |
2 A |
BOTTOM |
O-MBCY-W3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-205AD |
e0 |
18 pF |
|||||||||||||||||||
Motorola |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.6 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.4 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
6 ohm |
.4 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
NO |
.375 W |
FET General Purpose Small Signal |
JUNCTION |
200 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
3 pF |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
8 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
8 pF |
|||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.9 ohm |
.64 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
40 pF |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
350 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
25 ohm |
.12 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
5 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
240 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.3 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
.8 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.3 A |
BOTTOM |
O-PBCY-T3 |
TO-226AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
125 ohm |
.054 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
10 pF |
||||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
30 ohm |
.1 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
20 pF |
|||||||||||||||||||||
Intersil |
P-CHANNEL |
SINGLE |
NO |
.3 W |
1 |
.03 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
Tin/Lead (Sn/Pb) |
.03 A |
e0 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.