NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZVN4210ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

1.8 ohm

.45 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

TN0604N3-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

Not Qualified

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0604N3-G-P005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0604N3-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

50 pF

TN0604N3-GP003

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

50 pF

TN0604N3-GP005

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

TO-92

e3

50 pF

TN0604N3-GP014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

50 pF

VN10KN3-G-P013

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.31 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.31 A

BOTTOM

O-PBCY-T3

TO-92

NOT SPECIFIED

NOT SPECIFIED

5 pF

VN10KN3-GP013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.31 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.31 A

BOTTOM

O-PBCY-T3

TO-92

NOT SPECIFIED

NOT SPECIFIED

5 pF

VP0106N3-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

8 pF

2N4391PBFREE

Central Semiconductor

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

175 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

30 ohm

BOTTOM

O-MBCY-W3

TO-18

e3

3.5 pF

2N6661JTXV02

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

SWITCHING

90 V

WIRE

ROUND

ENHANCEMENT MODE

1

.86 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.86 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

BS107AG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

6.4 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

40

260

DN2535N3-GP003

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

25 ohm

.12 A

BOTTOM

O-PBCY-T3

TO-92

5 pF

TIS75

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

60 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-18

NOT SPECIFIED

NOT SPECIFIED

8 pF

TN2106N3-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

8 pF

ZVN3310ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

10 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N5462

Texas Instruments

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

400 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2 pF

2N6660-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

AMPLIFIER

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.99 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.99 A

BOTTOM

O-MBCY-W3

1

Not Qualified

LOW THRESHOLD

TO-205AD

e3

10 pF

2N6660JANTX

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.99 A

BOTTOM

O-MBCY-W3

DRAIN

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

MIL

2N6660JTX02

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

AMPLIFIER

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.99 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

.99 A

BOTTOM

O-MBCY-W3

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

2N6661-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

SWITCHING

90 V

WIRE

ROUND

ENHANCEMENT MODE

1

.86 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

SILVER

4 ohm

.86 A

BOTTOM

O-MBCY-W3

1

DRAIN

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-205AD

e4

10 pF

2N7000/D75Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

2N7000-D75Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

2N7000D75Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

5 pF

2SK118

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e0

2SK118-O

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

BS107ARL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

6.4 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-226AA

e0

30

235

BS170/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BS170_D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

10 pF

BS170-D74Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

10 pF

BS270_D74Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.4 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

.4 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

BS270/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.4 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

DN3545N3-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

20 ohm

.136 A

BOTTOM

O-PBCY-W3

HIGH INPUT IMPEDANCE

TO-92

15 pF

DN3545N3-GP014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

20 ohm

.136 A

BOTTOM

O-PBCY-W3

HIGH INPUT IMPEDANCE

TO-92

15 pF

MQ2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

NOT SPECIFIED

NOT SPECIFIED

7 pF

MIL-19500

NTE457

Nte Electronics

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

3 pF

TN0110N3-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

3 ohm

.35 A

BOTTOM

O-PBCY-T3

TO-92

8 pF

TP2104N3-GP002

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.175 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

TP2104N3-GP005

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.175 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

TP2104N3-GP013

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.175 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

TP2104N3-GP014

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.175 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

VN10K

Tt Electronics Plc

N-CHANNEL

SINGLE

NO

.3125 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.3125 W

150 Cel

SILICON

-55 Cel

5 ohm

.17 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

TO-206AA

5 pF

VN2222LL-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

7.5 ohm

.23 A

BOTTOM

O-PBCY-T3

TO-92

e3

8 pF

VN2222LL-GP005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

7.5 ohm

.23 A

BOTTOM

O-PBCY-T3

TO-92

8 pF

VN2222LL-GP014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

7.5 ohm

.23 A

BOTTOM

O-PBCY-T3

TO-92

8 pF

ZVNL110ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

4.5 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

2N3820

Texas Instruments

P-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

20 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

16 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.