NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5114E3

Microchip Technology

P-CHANNEL

SINGLE

NO

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

75 ohm

BOTTOM

O-MBCY-W3

HIGH RELIABILITY

TO-206AA

7 pF

2N5114-E3

Vishay Intertechnology

P-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N5115E3

Microchip Technology

P-CHANNEL

SINGLE

NO

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

100 ohm

BOTTOM

O-MBCY-W3

HIGH RELIABILITY

TO-206AA

7 pF

2N5115-E3

Vishay Intertechnology

P-CHANNEL

NO

.5 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N5116

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

.5 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

-55 Cel

TIN LEAD

150 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e0

7 pF

2N6661JTXL02

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.25 W

METAL

SWITCHING

90 V

WIRE

ROUND

ENHANCEMENT MODE

1

.86 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.86 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

TO-205AD

NOT SPECIFIED

NOT SPECIFIED

10 pF

2SJ598-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

50 pF

2SJ598-S15-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

50 pF

2SJ601-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

65 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.046 ohm

36 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

10

260

2SK30ATM

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-GR

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-O

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-Y

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK389-BL

Toshiba

N-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

BSS88E6296

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

12 pF

BSS88E6325

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

12 pF

DN2535N3-GP013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

25 ohm

.12 A

BOTTOM

O-PBCY-T3

TO-92

5 pF

DN3545N3

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.136 A

BOTTOM

O-PBCY-W3

Not Qualified

HIGH INPUT IMPEDANCE

TO-92

e0

15 pF

FQN1N50CTA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2.08 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.38 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.38 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

40 pF

FQN1N60CTA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

11.5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

6 pF

J177

Vishay Intertechnology

P-CHANNEL

NO

.35 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

LSK189-TO-92

Linear Integrated Systems

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-W3

TO-92

3 pF

LSK489TO-716LROHS

Linear Integrated Systems

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.5 W

UNSPECIFIED

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

2

6

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

.5 W

150 Cel

SILICON

-55 Cel

BOTTOM

O-XBCY-W6

TO-71

3 pF

MQ2N5116

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

TIN LEAD

175 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

MV2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

MX2N5114

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

75 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

7 pF

MIL-19500

MX2N5116

Microchip Technology

P-CHANNEL

SINGLE

NO

.5 W

METAL

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.5 W

200 Cel

SILICON

-65 Cel

TIN LEAD

175 ohm

BOTTOM

O-MBCY-W3

Not Qualified

HIGH RELIABILITY

TO-206AA

e0

7 pF

MIL-19500

TN0106N3-GP013

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

3 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

260

8 pF

TN0106N3-G-P013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

3 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

8 pF

TN0610N3-GP003

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TN0610N3-G-P003

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TP0604N3-G

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.75 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.43 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

TO-92

e3

60 pF

VN2410L-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

10 ohm

.19 A

BOTTOM

O-PBCY-T3

TO-92

e3

20 pF

VN2410L-GP003

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

10 ohm

.19 A

BOTTOM

O-PBCY-T3

TO-92

e3

20 pF

VN2410L-GP005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

10 ohm

.19 A

BOTTOM

O-PBCY-T3

TO-92

20 pF

VP0550N3-G-P013

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

125 ohm

.054 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

VP0550N3-GP013

Supertex

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

125 ohm

.054 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

JAN2N6901

Defense Logistics Agency

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

1.4 ohm

1.69 A

BOTTOM

O-MBCY-W3

DRAIN

Qualified

TO-205AF

MIL-19500/570B

TN0610N3-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE

TO-92

e3

35 pF

TN0610N3-G-P013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TN0610N3-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TN0610N3-GP005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TN0610N3-GP013

Supertex

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

TN0610N3-GP014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

.5 A

BOTTOM

O-PBCY-T3

TO-92

35 pF

VN0610LLRLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.19 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.19 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

5 pF

ZVN3310ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

10 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP3306ASTOB

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

14 ohm

.16 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVP3310A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

.14 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

TO-92

e3

30

260

5 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.