NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934005300116

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN

125 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

BSP304T/R

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.17 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

17 ohm

.17 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSN10-T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ohm

.175 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

BSP304

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.17 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

17 ohm

.17 A

BOTTOM

O-PBCY-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

BSV81

NXP Semiconductors

N-CHANNEL

SINGLE

NO

METAL

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

50 ohm

.025 A

BOTTOM

O-MBCY-W3

SUBSTRATE

Not Qualified

TO-72

.5 pF

BS208-AMMO

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

BSD212

NXP Semiconductors

N-CHANNEL

SINGLE

NO

METAL

SWITCHING

10 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

45 ohm

.05 A

BOTTOM

O-MBCY-W3

SUBSTRATE

Not Qualified

TO-72

BSV78

NXP Semiconductors

N-CHANNEL

SINGLE

NO

METAL

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

175 Cel

SILICON

25 ohm

BOTTOM

O-MBCY-W3

GATE

Not Qualified

TO-18

5 pF

934005320126

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN

300 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J112AMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn)

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J176

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN

250 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

J109,126

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

12 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

15 pF

J176,126

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

250 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J174

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN

85 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

J175AMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

125 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J111-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

30 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

PN4391-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

30 ohm

.012 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

PN4393-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

J174-T/R

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

85 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

J108-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

8 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

J177-T/R

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

300 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

J175-AMMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

125 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J110-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

18 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

15 pF

PN4392

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

60 ohm

.006 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

J108

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

8 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

15 pF

J109-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

12 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

J175,116

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

125 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

J111AMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J108-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

8 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

15 pF

J111-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J112-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

50 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

J177AMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Matte Tin (Sn)

300 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J112,126

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J175T/R

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Matte Tin (Sn)

125 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e3

J177,126

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

300 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

PN4393T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

100 ohm

.003 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

J176AMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Matte Tin (Sn)

250 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

J112-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PN4391

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

30 ohm

.012 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

J174-AMMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

85 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J110-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

15 pF

J176-T/R

NXP Semiconductors

P-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

250 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

PN4393

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

100 ohm

.003 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

J177-AMMO

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

300 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

PN4392T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

60 ohm

.006 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

5 pF

J109-T/R

NXP Semiconductors

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

12 ohm

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

15 pF

PN4391-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

PN4392-AMMO

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.