NO Small Signal Field Effect Transistors (FET) 1,839

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

JANTXVR2N7492T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

500 V

ENHANCEMENT MODE

1

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.77 ohm

2.5 A

BOTTOM

DRAIN

Qualified

TO-205AF

MIL-19500/675B

IPP80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0068 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED

TO-220AB

e3

2N7612M1

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

1.8 A

14

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

1.8 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

F4-23MR12W1M1_B11

Infineon Technologies

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

.02 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

16

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

UPPER

R-XUFM-X16

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

28 pF

IPI80N06S3-07

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0068 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-262AA

e3

260

JANTXVR2N7480U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

500 V

ENHANCEMENT MODE

1

22 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.77 ohm

2.5 A

BOTTOM

DRAIN

Qualified

TO-205AF

e0

MIL-19500/675B

JANTXVR2N7491T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.71 W

500 V

ENHANCEMENT MODE

1

12 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.77 ohm

2.5 A

BOTTOM

DRAIN

Qualified

TO-205AF

e0

MIL-19500/675B

IRF3415-030

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BSS98E6288

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

8 pF

IRHG9110SCS

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.2 ohm

.75 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

IRF3415-006

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

VH2N7262

Infineon Technologies

N-CHANNEL

SINGLE

NO

METAL

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

5.5 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

TO-205AF

e0

MIL-19500/601E

BSS92E6296

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

15 pF

IRF3415-012

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRHG7110SCS

Infineon Technologies

N-CHANNEL

SEPARATE, 4 ELEMENTS

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.7 ohm

1 A

DUAL

R-CDIP-T14

Not Qualified

MO-036AB

e0

IRF3415-005

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRF3415-029

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRHG597110PBF

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

14

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.96 ohm

.96 A

DUAL

R-CDIP-T14

MO-036AB

NOT SPECIFIED

NOT SPECIFIED

BSS92E6325

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

15 pF

2N7621T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

1.6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 A

BOTTOM

O-MBCY-W3

1

TO-205AF

VH2N7261

Infineon Technologies

N-CHANNEL

SINGLE

NO

METAL

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

8 A

BOTTOM

O-MBCY-W3

DRAIN

Not Qualified

TO-205AF

e0

MIL-19500/601E

IRF3415-010

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRF3415-019

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

JANTXVR2N7479U3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

500 V

ENHANCEMENT MODE

1

22 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.77 ohm

2.5 A

BOTTOM

1

DRAIN

Qualified

TO-205AF

MIL-19500/675B

IRF3415-003

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRHG9110

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS

NO

1.4 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.75 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.75 A

DUAL

R-CDIP-T14

Not Qualified

HIGH RELIABILITY

MO-036AB

e0

BSS98

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.63 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

8 pF

2N7628M1

Infineon Technologies

P-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

1 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

.71 A

14

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

.71 A

DUAL

R-CDIP-T14

1

Not Qualified

MO-036AB

IRF3415-002

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.042 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRHLF670Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-39

NOT SPECIFIED

NOT SPECIFIED

BSS296E-6288

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

.8 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSS149E6325

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

20 pF

IRHLF670Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

40

260

BSS295E6288

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

1.4 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

75 pF

IRHLF7970Z4SCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

1.25 ohm

1.5 A

BOTTOM

O-MBCY-W3

CMOS COMPATIBLE

TO-205AF

BSS129E-6325

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSS135E6325

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

60 ohm

.08 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

IRHLF770Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

1.6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

Not Qualified

CMOS COMPATIBLE

TO-205AF

e0

BSS149E-6288

Infineon Technologies

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3.5 ohm

.35 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

IRHLF780Z4PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

IRHLF730Z4SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

1.6 A

BOTTOM

O-MBCY-W3

TO-205AF

RH - 300K Rad(Si)

BSS125E6288

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

45 ohm

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

6 pF

BSS125

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

45 ohm

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

6 pF

IRHLF7970Z4PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.25 ohm

1.5 A

BOTTOM

O-MBCY-W3

CMOS COMPATIBLE

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

BSS297

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

.48 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.3 ohm

.48 A

BOTTOM

O-PBCY-W3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

30 pF

SN7000E6296

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e3

25 pF

IRHLF780Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

METAL

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

1.6 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

1.6 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

BSS129

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

10 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.