Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

FDS6673BZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0078 ohm

14.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

900 pF

FDS6676AS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.006 ohm

14.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NVGS5120PT1G

Onsemi

P-CHANNEL

SINGLE

YES

1.4 W

1

2.5 A

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.111 ohm

2.5 A

1

e3

30

260

FDS86140

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0098 ohm

11.2 A

DUAL

R-PDSO-G8

1

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

260

30 pF

2SK715W-AC

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

15 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.05 A

BOTTOM

O-PBCY-T3

TO-92

2N7002V

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.28 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

7.5 ohm

.28 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

7 pF

FDS6670AS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

13.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

MMBFJ177LT1

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

CHOPPER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

300 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

5.5 pF

NTR3C21NZT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.47 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.024 ohm

3.6 A

DUAL

R-PDSO-G3

1

ULTRA LOW RESISTANCE

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTS4409NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.33 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

12 pF

FDMS6673BZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

73 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

90 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0068 ohm

15.2 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

1045 pF

FDS86252

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

4.5 A

DUAL

R-PDSO-G8

1

e3

30

260

5 pF

FDC6310P

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.96 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.125 ohm

2.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDS6910-Z

Onsemi

NVF3055-100T1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.11 ohm

3 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

e3

30

260

155 pF

AEC-Q101

J175_D26Z

Onsemi

P-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

125 ohm

BOTTOM

O-PBCY-T3

TO-92

e3

FDMB3900AN

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.023 ohm

7 A

DUAL

R-PDSO-N6

1

DRAIN

ULTRA-LOW RESISTANCE

e4

30

260

215 pF

NTJS3151PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.625 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

2.7 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

2SK932-23-TB-E

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

30

260

3 pF

FDMS7608S

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

30 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.01 ohm

12 A

DUAL

R-PDSO-N6

1

DRAIN SOURCE

Not Qualified

e4

30

260

65 pF

FDS4501H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

9.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.018 ohm

9.3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

BSR57

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

40 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

5 pF

NTGD3148NT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.07 ohm

3 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CPH3362-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1.7 ohm

.7 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

7.3 pF

FDN86501LZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.116 ohm

2.6 A

DUAL

R-PDSO-G3

1

e3

30

260

10 pF

FDG8842CZ

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.75 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

.75 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

25 pF

NTA7002NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.154 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.154 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

2N5457G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

40

260

3 pF

CPH3910-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.4 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.4 W

150 Cel

SILICON

TIN BISMUTH

.05 A

DUAL

R-PDSO-G3

1

e6

30

260

2.3 pF

FDS86240

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0198 ohm

7.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

15 pF

MCH6661-TL-W

Onsemi

TIN BISMUTH

1

e6

30

260

VN2222LLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.099 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

7.5 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

10

260

5 pF

FDC642P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.065 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

145 pF

FDS8449

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.029 ohm

7.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTTFS4824NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

69 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0075 ohm

8.3 A

DUAL

S-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

255 pF

SFT1452-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

26 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

MCH6602-TL-E

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

BS270

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.4 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

.4 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

2SK545-11D-TB-E

Onsemi

TIN BISMUTH

1

e6

30

260

NTMS4177PR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.012 ohm

6.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTR3A052PZT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.72 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.047 ohm

3.3 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

CPH3351-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.25 ohm

1.8 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

MMBFJ111

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

Tin (Sn)

30 ohm

DUAL

R-PDSO-G3

1

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

5 pF

FDG6322C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.22 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.22 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

FDMA86265P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

1.2 ohm

1 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

5 pF

FDS8449-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.029 ohm

7.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

FDMA6676PZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0135 ohm

11 A

DUAL

S-PDSO-N3

1

DRAIN

ULTRA LOW RESISTANCE

e3

30

260

690 pF

FDS6673BZ-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.0078 ohm

14.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

900 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.