Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UPA675T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA2712GR-E1-A

Renesas Electronics

TIN BISMUTH

e6

260

2SJ451ZK-TR-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

9 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RQK0303MGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA2714GR

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.034 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

e0

2SK2415-Z-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

10

260

NP75N04YUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

75 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0048 ohm

75 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

450 pF

2SJ324-Z-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

10

260

UPA1902TE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.03 ohm

7 A

DUAL

R-PDSO-G6

Not Qualified

e0

2SK2415-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK852-X3

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SK980XAFTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.04 A

DUAL

R-PDSO-G3

Not Qualified

NP75P04YLG-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

75 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.014 ohm

75 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 pF

UPA1870BGR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

2SJ325-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

N0400P-ZK-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.073 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

RQJ0306FQDQA#H1

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NOT SPECIFIED

NOT SPECIFIED

2SJ278MYTR-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

1 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IT502

Renesas Electronics

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2SK520-K41

Renesas Electronics

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

.05 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

HAT2282C-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

1.5 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA1858GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

YES

2 W

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

5 A

e6

HAT1093C-EL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.128 ohm

3 A

DUAL

R-PDSO-F6

1

Not Qualified

e6

20

260

3SK154IZ-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

UPA1910TE-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

3SK191NI-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

.08 A

DUAL

R-PDSO-G4

Not Qualified

2SK291TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

HAT2089R

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

.002 A

DUAL

R-PDSO-G8

Not Qualified

2SK2978ZYTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

2.5 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

20

260

RQK0605JGDQATL-H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.131 ohm

3.1 A

DUAL

R-PDSO-G3

UPA1902TE-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 ohm

7 A

DUAL

R-PDSO-G6

Not Qualified

10

260

2SJ324-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

e0

105 pF

RQJ0202VGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ358-T2-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK681

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

1 A

SINGLE

R-PSIP-T3

Not Qualified

2SK2414(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

2SJ327-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

10

260

HAT1091C-EL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.287 ohm

1.5 A

DUAL

R-PDSO-F6

1

Not Qualified

20

260

2SJ484

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

2 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

RQJ0304DQDQA#H6

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

NOT SPECIFIED

NOT SPECIFIED

UPA1915TE(0)-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

e3

260

UPA621TT-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.079 ohm

5 A

DUAL

R-PDSO-F6

Not Qualified

e6

10

260

UPA1919TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.084 ohm

6 A

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

3SK138IX-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

UPA1915TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

e3

260

NP29N04QUK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ621-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.062 ohm

3.5 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ557A-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.