Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SJ462-T2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

2.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

2SK291RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

UPA572CT-T1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

3SK137VIW-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

2SK980XAFUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.04 A

DUAL

R-PDSO-G3

Not Qualified

NP30N04QUK-E2-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

GWS4621L

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA1952TE-T1-AT

Renesas Electronics

P-CHANNEL

YES

1.15 W

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

NP75N04YUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

75 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0048 ohm

75 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

450 pF

BB301MAW

Renesas Electronics

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

.025 A

DUAL

R-PDSO-G4

Not Qualified

2SK680A-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1 ohm

1 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e6

10

260

2SK515

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

125 Cel

Tin/Lead (Sn/Pb)

e0

RQK0202RGDQATL-H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.085 ohm

3.8 A

DUAL

R-PDSO-G3

3SK162IT

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

3SK138IX-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

RQM2201DNS#P1

Renesas Electronics

N-CHANNEL

YES

1.5 W

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

UPA620TT-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.054 ohm

5 A

DUAL

R-PDSO-F6

Not Qualified

e6

10

260

UPA1814GR-9JG

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.027 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

ESD PROTECTED

e0

3SK137IW

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

UPA1600CX-A

Renesas Electronics

N-CHANNEL

SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

8

20

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

4 ohm

.5 A

DUAL

R-PDIP-T20

Not Qualified

e6

10

260

RQK2001HQDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6.7 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2452TL

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

24 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

7.8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

7.8 A

DUAL

R-PDSO-F6

DRAIN

Not Qualified

e0

HAT1069C

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.9 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.093 ohm

4 A

DUAL

R-PDSO-F6

Not Qualified

2SJ461A-T2B-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ278TR

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

1 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

2SJ463A-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

23 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

HAT2080R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

1.7 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

UPA678TB

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.25 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.55 ohm

.25 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA2713GR

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e0

3SK197WI-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

2SJ324-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

10

260

2SK2752WV

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

GALLIUM ARSENIDE

.008 A

DUAL

R-PDSO-G4

Not Qualified

2SJ44

Renesas Electronics

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

125 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

RQJ0302NGDQATL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.303 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

2SK2415-ZK-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA502CT-T1-AT

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.3 W

150 Cel

SILICON

2.7 ohm

.1 A

DUAL

R-PDSO-G5

NOT SPECIFIED

NOT SPECIFIED

2 pF

2SJ463A-T2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

23 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA652TT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.336 ohm

2 A

DUAL

R-PDSO-F6

Not Qualified

e0

UPA1911ATE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.12 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

e0

3SK154IZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

NP75N04YLG-E2-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2159-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.5 ohm

2 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

GATE PROTECTED

e0

2SJ601(0)-Z-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.046 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA1601CX-A

Renesas Electronics

N-CHANNEL

SEPARATE, 7 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

7

16

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

5.3 ohm

.43 A

DUAL

R-PDIP-T16

Not Qualified

e6

10

260

UPA1793G-E1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

e6

2SK291PRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

2SJ325

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.24 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SJ601-ZK-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.046 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.