Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UPA572CT-T1-A/AT

Renesas Electronics

2SK853A

Renesas Electronics

3SK191NI

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

.08 A

DUAL

R-PDSO-G4

Not Qualified

2SK660

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

.1 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

.01 A

SINGLE

R-PSIP-T3

Not Qualified

e0

3 pF

NP75N055YUK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2040-Z

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

HAT2057RA

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

4 A

DUAL

R-PDSO-G8

Not Qualified

RJF0609JSP-00-J0

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.5 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

UPA2460T1Q-E1-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0275 ohm

6.5 A

DUAL

R-PDSO-N8

Not Qualified

e4

2SK2109-T2-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2541

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.1 A

SINGLE

R-PSIP-T3

Not Qualified

ESD PROTECTED, HIGH INPUT IMPEDANCE

e0

2SJ353-T-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP35N055YUK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ647-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1.55 ohm

.4 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ326-Z-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.37 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

10

260

ISL73024SEHX/SAMPLE

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-55 Cel

.11 ohm

7.5 A

BOTTOM

R-XBCC-N7

DRAIN SOURCE

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

1 pF

2SJ600-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.05 ohm

25 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

e0

140 pF

2SJ600-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.079 ohm

25 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

NP16N04YUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.025 ohm

16 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 pF

2SK291SRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

UPA672CT-T1-A/AT

Renesas Electronics

2SJ463A-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

.15 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NOT SPECIFIED

NOT SPECIFIED

2SJ598-ZK-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

50 pF

NP20P06YLG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

57 W

1

20 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

UPA650TT-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.068 ohm

5 A

DUAL

R-PDSO-F6

Not Qualified

e6

10

260

UPA1814GR(0)-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.027 ohm

7 A

DUAL

R-PDSO-G8

e6

2SJ206-T2-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA2712GR(0)-E1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

e6

UPA602T-T1-A

Renesas Electronics

N-CHANNEL

YES

.3 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

HAT2088R

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.5 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.44 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

2SJ599

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.111 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

e0

UPA1913TE(0)-T1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK853-K6

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SK2569ZN-TR-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.6 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

20

260

RQK0302GGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA651TT-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.088 ohm

5 A

DUAL

R-PDSO-F6

Not Qualified

e6

10

260

2SJ625-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NOT SPECIFIED

NOT SPECIFIED

RQJ0203WGDQATL-H

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

2.1 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

UPA1980TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

.57 W

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

2SK980XAGUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.04 A

DUAL

R-PDSO-G3

Not Qualified

HAT2087R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.31 ohm

2.5 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

2SJ621

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.062 ohm

3.5 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK2982-Z

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.019 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

2SJ243-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SK291RRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

2SJ598-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

50 pF

UPA508TE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.57 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

2 A

DUAL

R-PDSO-G5

Not Qualified

e0

2SJ209-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.