Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

3SK233XW-TL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

2SJ45

Renesas Electronics

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

125 Cel

SILICON

.03 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

RJK6011DJE-00#Z0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52 ohm

.1 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

2SK2980ZZ-TL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.5 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

20

260

HITJ0202MPTL-HQ

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

2.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.7 A

2SK2858-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

8 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA1815GR-9JG

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.023 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

ESD PROTECTED

e0

UPA654TT-E2-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.133 ohm

2.5 A

DUAL

R-PDSO-F6

Not Qualified

e6

2SJ45L

Renesas Electronics

P-CHANNEL

NO

FET General Purpose Small Signal

JUNCTION

125 Cel

Tin/Lead (Sn/Pb)

e0

3SK197WI-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

2SJ559-T1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

23 ohm

.1 A

DUAL

R-PDSO-G3

e6

2SJ204-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.2 A

e6

3SK295ZQ

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

Not Qualified

UPA505T-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

.3 W

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SJ211

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA679TB-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

.2 W

.35 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.35 A

e6

2SK2070

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.45 ohm

1.5 A

SINGLE

R-PSIP-T3

Not Qualified

GATE PROTECTED

e0

UPA572T-T1-A

Renesas Electronics

N-CHANNEL

YES

.2 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SK2158-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

20 ohm

.1 A

DUAL

R-PDSO-G3

e6

HAT2085T

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.64 ohm

1.4 A

DUAL

R-PDSO-G8

Not Qualified

UPA1915TE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

4.5 A

DUAL

R-PDSO-G6

Not Qualified

e0

RQJ0203WGDQA#H1

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

2.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NOT SPECIFIED

NOT SPECIFIED

NP35N04YUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

77 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

35 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.01 ohm

35 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

220 pF

UPA2450TL

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0275 ohm

8.6 A

DUAL

R-PDSO-F6

DRAIN

Not Qualified

e0

UPA1910TE-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.09 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

2SJ327-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

e0

165 pF

2SK852-T1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.15 W

150 Cel

SILICON

TIN BISMUTH

.02 A

DUAL

R-PDSO-G3

e6

2.6 pF

N0608N-ZK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA678TB(0)-T1-AT

Renesas Electronics

P-CHANNEL

YES

.2 W

.25 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 A

NOT SPECIFIED

NOT SPECIFIED

2SK2734

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

RQJ0305EQDQA#H1

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

NOT SPECIFIED

NOT SPECIFIED

HITK0203MPTL-HQ

Renesas Electronics

N-CHANNEL

SINGLE

YES

.8 W

1

2.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.9 A

NP50P03YDG-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

102 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

50 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.013 ohm

50 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

580 pF

2SJ496TZ-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.24 ohm

5 A

BOTTOM

O-PBCY-T3

1

Not Qualified

e2

2SJ186CYEL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2111-T1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SJ363

Renesas Electronics

P-CHANNEL

SINGLE

YES

1 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.75 ohm

2 A

SINGLE

R-PSSO-F3

Not Qualified

UPA2712GR

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.026 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e0

RQJ0306FQDQATL-H

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.165 ohm

3 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

UPA672T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

40 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

NP20N10YDF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

61 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

2SJ600

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.05 ohm

25 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

e0

140 pF

2SJ463A(0)-T1-A

Renesas Electronics

TIN BISMUTH

e6

2SJ598-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

TIN LEAD

.19 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e0

50 pF

2SJ557A-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2.5 A

e6

RQJ0304DQDQA#H1

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

NOT SPECIFIED

NOT SPECIFIED

RQK0202RGDQA#H1

Renesas Electronics

N-CHANNEL

SINGLE

YES

.8 W

1

3.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.8 A

NOT SPECIFIED

NOT SPECIFIED

2SJ648-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.4 A

e6

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.