Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK2552-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.01 A

DUAL

R-PDSO-G3

Not Qualified

UPA611TA-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

8 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

RQJ0603LGDQA#H6

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

NOT SPECIFIED

NOT SPECIFIED

N0607N-ZK-E1-AY

Renesas Electronics

130 A

73 mJ

65 A

NOT SPECIFIED

NOT SPECIFIED

UPA1858GR-9JG-A

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.038 ohm

5 A

DUAL

R-PDSO-G8

1

Not Qualified

N2500N-T1B-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6.6 ohm

.5 A

DUAL

R-PDSO-G3

Not Qualified

e3

2SK852-X4

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SJ243

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

Tin/Lead (Sn/Pb)

25 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

ESD PROTECTED

e0

UPA677TB(0)-T1-A

Renesas Electronics

N-CHANNEL

YES

.2 W

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.35 A

e6

2SJ624-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

HAT2089R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

UPA1911ATE(0)-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

2.5 A

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

UPA1793G-E1-AT

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

3 A

e3

260

3SK229XS-UR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

.08 A

DUAL

R-PDSO-G4

Not Qualified

2SJ209-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

UPA1870GR-9JG

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.027 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA2712GR-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.026 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA1600GS-A

Renesas Electronics

N-CHANNEL

SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

8

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

4 ohm

.5 A

DUAL

R-PDSO-G20

Not Qualified

e6

10

260

RQJ0305EQDQATL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

2.4 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RQK0604IGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.144 ohm

2 A

DUAL

R-PDSO-G3

1

Not Qualified

ISL70024SEHMX

Renesas Electronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

7

CHIP CARRIER

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-55 Cel

.11 ohm

7.5 A

BOTTOM

R-XBCC-N7

DRAIN SOURCE

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

1 pF

RH - 100K Rad(Si)

HAT2085R

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.64 ohm

.002 A

DUAL

R-PDSO-G8

Not Qualified

UPA2521T1H-T2-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0165 ohm

8 A

DUAL

R-PDSO-F8

Not Qualified

e3

UPA1804GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

3SK297ZP

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 A

DUAL

R-PDSO-G4

Not Qualified

3SK191NI-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

GALLIUM ARSENIDE

.08 A

DUAL

R-PDSO-G4

Not Qualified

2SK2414(0)-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

2SJ358-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ461-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

50 ohm

.1 A

DUAL

R-PDSO-G3

e6

RQK2501YGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

5.6 ohm

.4 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

2SK2552-J2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.01 A

DUAL

R-PDSO-G3

Not Qualified

2SJ206-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

10

260

2SJ598(1)-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

50 pF

RQJ0203WGDQA#H6

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

2.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

NOT SPECIFIED

NOT SPECIFIED

UPA573CT-T1-A

Renesas Electronics

TIN BISMUTH

e6

NP50N04YUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

50 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

240 pF

AEC-Q101

NP75P04YLG-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

138 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

75 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.014 ohm

75 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

450 pF

RJK5002DJE-00#Z0

Renesas Electronics

N-CHANNEL

SINGLE

NO

.9 W

1

2.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

UPA503T-T2-A

Renesas Electronics

P-CHANNEL

YES

.3 W

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

RQK0201QGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA1816GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

e6

2SK975TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.55 ohm

1.5 A

BOTTOM

O-PBCY-T3

1

Not Qualified

e2

UPA1813GR-9JG

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA503T(0)-T1-A

Renesas Electronics

P-CHANNEL

YES

.3 W

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SK2752WV-UL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

6 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

GALLIUM ARSENIDE

.008 A

DUAL

R-PDSO-G4

Not Qualified

2SK2158A-T1B-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

HAT2206C-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

2 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2541-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

20 ohm

.1 A

SINGLE

R-PSIP-T3

Not Qualified

ESD PROTECTED, HIGH INPUT IMPEDANCE

e6

10

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.