Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SJ648

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.55 ohm

.4 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK980XAG01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.04 A

DUAL

R-PDSO-G3

Not Qualified

2SK520-K45

Renesas Electronics

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

.05 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

UPA1980TE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.57 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.183 ohm

2 A

DUAL

R-PDSO-G6

Not Qualified

e0

RQK0203SGDQA#H6

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA2714GR(0)-E1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

UPA1981TE

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

1

Not Qualified

2SJ44N

Renesas Electronics

P-CHANNEL

NO

FET General Purpose Small Signal

JUNCTION

125 Cel

Tin/Lead (Sn/Pb)

e0

2SK2570

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

RQK0603CGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2158

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

GATE PROTECTED, HIGH INPUT IMPEDANCE

e0

2SJ599-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.111 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

UPA1600GS

Renesas Electronics

N-CHANNEL

SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

8

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

4 ohm

.5 A

DUAL

R-PDSO-G20

Not Qualified

e0

UPA3753GR-E2-AT

Renesas Electronics

N-CHANNEL

YES

1.12 W

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NOT SPECIFIED

NOT SPECIFIED

HAT3015T-EL-E

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5.5 ohm

.5 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ179-T2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.5 ohm

1.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e0

2SJ327-Z-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA611TA-T1-A

Renesas Electronics

N-CHANNEL

YES

.3 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

UPA1918TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

3.5 A

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

UPA602T

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.3 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

2SK3408-T2B-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

43 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

.26 ohm

1 A

DUAL

R-PDSO-G3

30 pF

2SK3377-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.078 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK1031XDCTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.005 A

DUAL

R-PDSO-G3

Not Qualified

2SK197YE01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

2SK1070PIEUR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN LEAD

.05 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK3483(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

28 A

NOT SPECIFIED

NOT SPECIFIED

2SK3408-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

48 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.26 ohm

1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SK1591-T1B-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

8 ohm

.2 A

DUAL

R-PDSO-G3

e6

2SK1326XJDTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

22 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK197YB

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

2SK1580-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

15 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SK1070PID

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

2SK3919-ZK-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

NOT SPECIFIED

NOT SPECIFIED

2SK1133-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SK322-Q

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3224

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK3577

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.091 ohm

3.5 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK322WSUR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3993-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

NOT SPECIFIED

NOT SPECIFIED

2SK197YCUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

18 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

2SK3653J3-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

.01 A

DUAL

R-PDSO-G3

GATE

Not Qualified

2SK3653CEF

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN LEAD

.01 A

DUAL

R-PDSO-F3

Not Qualified

e0

2SK425-T2B-A

Renesas Electronics

TIN BISMUTH

e6

2SK4069-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.021 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

2SK1580-T1-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.1 A

DUAL

R-PDSO-G3

e6

2SK3378ENTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

.1 A

DUAL

R-PDSO-G3

1

Not Qualified

20

260

2SK3991

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0302 ohm

30 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK3653J4-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

.01 A

DUAL

R-PDSO-G3

GATE

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.