Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SJ184

Renesas Electronics

P-CHANNEL

SINGLE

NO

.25 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

.1 A

RQJ0204XGDQA#H6

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

NOT SPECIFIED

NOT SPECIFIED

UPA2451BTL

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

8.2 A

DUAL

R-PDSO-F6

DRAIN

Not Qualified

e0

UPA2451TL

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.032 ohm

8.2 A

DUAL

R-PDSO-F6

DRAIN

Not Qualified

e0

N0302P-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

4.4 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

NP75N04YLG-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

3SK224

Renesas Electronics

.025 A

FET RF Small Signal

2SJ317NYTL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.35 ohm

2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

20

260

UPA621TT-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

1.4 W

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

5 A

e6

260

UPA622TT-E2-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.082 ohm

3 A

DUAL

R-PDSO-F6

Not Qualified

e6

2SK853-T1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA1814GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.027 ohm

7 A

DUAL

R-PDSO-G8

e6

2SK2158-T2B-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.1 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

RQK0605JGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.131 ohm

3.1 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

UPA2450CTL-E2-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0275 ohm

8.6 A

DUAL

R-PDSO-F6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK291TRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

UPA1981TE-T2-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

2.8 A

DUAL

R-PDSO-G6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ598-Z-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.19 ohm

12 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

50 pF

2SJ588

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7.9 ohm

.1 A

SINGLE

R-PSIP-T3

Not Qualified

2SK853A-K27

Renesas Electronics

2SK2247

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.45 ohm

2 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

2SK2552C-EE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

.01 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA1740TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.44 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA1774G

Renesas Electronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.33 ohm

2.8 A

DUAL

R-PDSO-G8

Not Qualified

e0

2SK853-K7

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SJ461

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SJ212-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

3 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e6

10

260

2SJ278MYTL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

1 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

20

260

2SK2552C-EH

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

.01 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK2090-T2-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

40 ohm

.1 A

DUAL

R-PDSO-G3

e6

UPA1740TP-E2-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

UPA1952TE-T1-A

Renesas Electronics

P-CHANNEL

YES

1.15 W

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2 A

e6

UPA502T-T2-A

Renesas Electronics

N-CHANNEL

YES

.3 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

UPA502CT-T1-A

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.3 W

150 Cel

SILICON

TIN BISMUTH

2.7 ohm

.1 A

DUAL

R-PDSO-G5

e6

2 pF

2SK2373ZE-TL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7.5 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

20

260

2SK291PRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.05 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

RQJ0306FQDQA#H6

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NOT SPECIFIED

NOT SPECIFIED

RQJ0204XGDQATL-H

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.51 ohm

1.6 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2SJ599-Z

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.111 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

e0

UPA2352T1G-E4-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

UNSPECIFIED

SQUARE

ENHANCEMENT MODE

2

4

GRID ARRAY

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

BOTTOM

S-PBGA-X4

Not Qualified

e6

RQK0202RGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.085 ohm

3.8 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

HITJ0302MPTL-HQ

Renesas Electronics

P-CHANNEL

SINGLE

YES

.8 W

1

2.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.2 A

HITK0204MPTL-HQ

Renesas Electronics

N-CHANNEL

SINGLE

YES

.8 W

1

2.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

2SJ624-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

2SJ518AZTR-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.63 ohm

2 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e6

20

260

2SK2414-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

10

260

2SK2109(0)-T1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

N0100P-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.062 ohm

3.5 A

DUAL

R-PDSO-F3

e3

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.