Toshiba Small Signal Field Effect Transistors (FET) 1,975

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SSM3K72KFS,LF(T

Toshiba

TPH1R405PL,L1Q

Toshiba

TPH5R60APL,L1Q

Toshiba

2SK118

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e0

2SK118-O

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

SSM3J334R,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.071 ohm

4 A

DUAL

R-PDSO-F3

40 pF

SSM3K36TU,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3K36TU,LF(T

Toshiba

SSM3K62TU,LF

Toshiba

SSM3K72CFS,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.17 A

DUAL

R-PDSO-G3

.7 pF

SSM6L35FE,LM

Toshiba

SSM6N48FU,LF

Toshiba

SSM6N58NU,LF

Toshiba

TPH2R608NH

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0026 ohm

150 A

DUAL

S-PDSO-F5

DRAIN

95 pF

TPH6R30ANL,L1Q

Toshiba

2SK209-BL(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

LOW NOISE

TO-236

NOT SPECIFIED

NOT SPECIFIED

2SK30ATM

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-GR

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-O

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK30ATM-Y

Toshiba

N-CHANNEL

SINGLE

NO

.1 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK389-BL

Toshiba

N-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

SSM3J374R,LF

Toshiba

SSM3K116TU,LF

Toshiba

SSM3K116TU,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

2.2 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3K121TU,LF(T

Toshiba

SSM3K318RLF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.107 ohm

2.5 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

23 pF

SSM3K318R,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.107 ohm

2.5 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

23 pF

SSM6H19NU,LF

Toshiba

SSM6J501NU,LF

Toshiba

SSM6J501NU,LF(T

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0265 ohm

10 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

280 pF

SSM6N7002BFE,LM

Toshiba

SSM6N7002FU(TE85LF)

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.2 A

DUAL

R-PDSO-G6

1.4 pF

TPC8053-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0242 ohm

9 A

DUAL

R-PDSO-G8

90 pF

TPCP8107,LF

Toshiba

2SK209-Y(TE85L,F)

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3K16FU(TE85LF)

Toshiba

SSM3K318R,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.107 ohm

2.5 A

DUAL

R-PDSO-F3

23 pF

SSM3K318R,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.107 ohm

2.5 A

DUAL

R-PDSO-F3

23 pF

SSM3K36MFV,L3F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-F3

1

260

7.3 pF

SSM6N35AFE

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM6N35AFE,LF

Toshiba

SSM6N35AFE,LF(B

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.4 ohm

.25 A

DUAL

R-PDSO-F6

10 pF

TPN5R203PL,LQ

Toshiba

SSM3J334R

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.071 ohm

4 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J351R

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.184 ohm

3.5 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

50 pF

AEC-Q101

SSM3K37MFV,L3F(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.2 ohm

.25 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

TPWR6003PL,L1Q

Toshiba

2SK117

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.