Toshiba Small Signal Field Effect Transistors (FET) 1,975

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK2145-BL(TE85L,F

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3K357R,LF

Toshiba

2SK880-Y(TE85L,F)

Toshiba

TPN2R203NC,L1Q

Toshiba

2SJ74-BL

Toshiba

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

SSM6J214FE(TE85LF

Toshiba

2SK208-GR(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

.1 W

125 Cel

SILICON

DUAL

R-PDSO-G3

LOW NOISE

2.6 pF

TPC8107

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.015 ohm

13 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J358R,LF

Toshiba

SSM6N40TU,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TPH7R204PL,LQ

Toshiba

TPH9R506PL,LQ

Toshiba

2SK369-BL

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

SSM3K56CT,L3F

Toshiba

SSM6N67NU,LF

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0391 ohm

4 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

TPW1R306PL,L1Q

Toshiba

2SK117-BL

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

2SK208-Y(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

2SK880-GR(TE85LF)

Toshiba

2SK880-GR(TE85L,F)

Toshiba

SSM3J130TU,LF

Toshiba

SSM3K127TU,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3K15AFU,LF

Toshiba

SSM3K15F,LF

Toshiba

SSM6N37FE,LM

Toshiba

SSM6N7002CFU,LF

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.285 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.7 ohm

.17 A

DUAL

R-PDSO-G6

.7 pF

TPN1110ENH,L1Q

Toshiba

SSM3J143TU,LF

Toshiba

SSM3J15F,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3J56MFV,L3F

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.39 ohm

.8 A

DUAL

R-PDSO-F3

1

260

10 pF

SSM3K122TU,LF

Toshiba

SSM3K344R,LF

Toshiba

SSM3K72CTC,L3F

Toshiba

SSM6J412TU,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0427 ohm

4 A

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

99 pF

SSM6N24TU,LF

Toshiba

SSM6N357R,LF

Toshiba

SSM6N35AFU,LF

Toshiba

SSM6P36TU,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TPH3R704PL,L1Q

Toshiba

TPW1R104PB,L1XHQ

Toshiba

TPW2R508NH,L1Q

Toshiba

2SJ109-BL

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

2SK2615(TE12L,F)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.44 ohm

2 A

SINGLE

R-PSSO-F3

DRAIN

2SK389

Toshiba

N-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

7

IN-LINE

FET General Purpose Small Signal

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T7

Not Qualified

LOW NOISE

e0

SSM3J135TU,LF

Toshiba

SSM3J15FV,L3F

Toshiba

SSM3K345R,LF

Toshiba

SSM3K35AFS,LF

Toshiba

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.