Toshiba Small Signal Field Effect Transistors (FET) 1,975

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK373

Toshiba

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

2SK880-Y

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e0

2SK880YTE85L

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

SSM3J108TU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.158 ohm

1.8 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J15F,LF(T

Toshiba

SSM3J327R,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.093 ohm

3.9 A

DUAL

R-PDSO-F3

32 pF

SSM3J327RLF(T

Toshiba

SSM3J35AFS,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0021 ohm

.25 A

DUAL

R-PDSO-G3

2 pF

SSM3J371R,LF

Toshiba

SSM3J371R,LXHF

Toshiba

SSM3J56MFVL3F(T

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.39 ohm

.8 A

DUAL

R-PDSO-F3

10 pF

SSM3K123TU,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.032 ohm

4.2 A

DUAL

R-PDSO-F3

30

260

SSM3K131TU,LF

Toshiba

SSM3K15ACT,L3F

Toshiba

SSM3K15F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3K16FU,LF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4 ohm

.1 A

DUAL

R-PDSO-G3

4.5 pF

SSM3K44FS,LF

Toshiba

SSM3K7002F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

SSM3K7002KF,LF(B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.75 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

SSM3K7002KFU,LF

Toshiba

SSM5H16TU,LF

Toshiba

SSM6J212FE,LF

Toshiba

SSM6J414TU,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0225 ohm

6 A

DUAL

R-PDSO-F6

90 pF

SSM6J424TU,LF

Toshiba

SSM6K211FE,LF

Toshiba

SSM6K810R,LF

Toshiba

SSM6L12TU,LF

Toshiba

SSM6L36FE,LM

Toshiba

SSM6L39TU,LF(T

Toshiba

SSM6L61NU,LF

Toshiba

SSM6L61NU,LF(T

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.033 ohm

4 A

DUAL

S-PDSO-N6

30

260

SSM6N16FE,L3F

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM6N24TU,LF(B

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.145 ohm

.5 A

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

SSM6N36FE,LM

Toshiba

SSM6N40TU

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.122 ohm

1.6 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6N43FU

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-G6

NOT SPECIFIED

NOT SPECIFIED

SSM6N43FU,LF

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-G6

7.3 pF

SSM6N44FE,LM

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 ohm

.1 A

DUAL

R-PDSO-F6

30

260

5.3 pF

SSM6N44FE,LM(B

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

7 ohm

.1 A

DUAL

R-PDSO-F6

SSM6N55NU,LF

Toshiba

SSM6N62TU,LF

Toshiba

NOT SPECIFIED

NOT SPECIFIED

TPC8028

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.008 ohm

18 A

DUAL

R-PDSO-G8

Not Qualified

TPC8125

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.017 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

TPH3R704PL,L1Q(M

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

81 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0037 ohm

92 A

DUAL

S-PDSO-F5

DRAIN

80 pF

TPH3R70APL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0037 ohm

150 A

DUAL

S-PDSO-F5

DRAIN

59 pF

TPN1200APL,L1Q

Toshiba

TPN2010FNH,L1Q

Toshiba

TPN2R703NL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0041 ohm

45 A

DUAL

S-PDSO-F8

DRAIN

120 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.