Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0292 ohm |
8.3 A |
DUAL |
R-PDSO-G8 |
7.2 pF |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
NO |
.31 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Matte Tin (Sn) |
1 |
e3 |
|||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
2.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.054 ohm |
4 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
14 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
85 ns |
-55 Cel |
213 ns |
.025 ohm |
8 A |
DUAL |
R-PDSO-G6 |
MO-193AA |
NOT SPECIFIED |
NOT SPECIFIED |
620 pF |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.011 ohm |
9.8 A |
DUAL |
R-PDSO-G8 |
MS-012AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.59 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.48 ohm |
.59 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.14 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.375 ohm |
1.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
MO-193C |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.28 ohm |
.8 A |
DUAL |
R-PDSO-G6 |
12 pF |
AEC-Q101 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
4.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.032 ohm |
9 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.053 ohm |
3.7 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
NO |
.35 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.7 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.19 ohm |
2.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
25 pF |
|||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.039 ohm |
5.3 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
120 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Pure Matte Tin (Sn) |
.1 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
30 |
260 |
20 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.053 ohm |
3.7 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
16.7 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
44 ns |
-55 Cel |
75 ns |
.061 ohm |
6.9 A |
DUAL |
R-PDSO-G6 |
MO-193AA |
NOT SPECIFIED |
NOT SPECIFIED |
115 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.14 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4.9 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.021 ohm |
4.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
50 mJ |
1.5 A |
4 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
30 |
260 |
15 pF |
|||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.71 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.057 ohm |
2.6 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
.2 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.97 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) |
.06 ohm |
5.97 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
30 |
260 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.6 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.126 ohm |
3.8 A |
DUAL |
R-PDSO-G6 |
1 |
MO-193AA |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
14 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
19.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.0098 ohm |
13 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
YES |
2.7 W |
1 |
9.3 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
9.3 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
6.5 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
4.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.029 ohm |
4.5 A |
DUAL |
S-XDSO-N6 |
DRAIN |
Not Qualified |
e3 |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.5 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.078 ohm |
2.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
75 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.6 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.38 ohm |
2.2 A |
DUAL |
R-PDSO-G6 |
1 |
MO-193AA |
e3 |
30 |
260 |
3 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Pure Matte Tin (Sn) |
.047 ohm |
4 A |
DUAL |
R-PDSO-G6 |
1 |
MO-193AA |
30 |
260 |
111 pF |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
.3 W |
METAL |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
1 |
4 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
175 Cel |
SILICON |
MATTE TIN |
BOTTOM |
O-MBCY-W4 |
1 |
Not Qualified |
LOW NOISE |
TO-206AF |
e3 |
1.5 pF |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.041 ohm |
4 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
|||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
1.25 W |
1 |
2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
2 A |
1 |
e0 |
||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.75 W |
PLASTIC/EPOXY |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.3 ohm |
.53 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
16 pF |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.077 ohm |
2.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.85 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.09 ohm |
2.85 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.018 ohm |
6.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
1.8 W |
METAL |
SWITCHING |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
200 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
60 ohm |
BOTTOM |
O-MBCY-W3 |
1 |
GATE |
Not Qualified |
LOW INSERTION LOSS |
TO-206AA |
e3 |
30 |
260 |
3.5 pF |
||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6.25 W |
METAL |
SWITCHING |
90 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.86 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 ohm |
.86 A |
BOTTOM |
O-MBCY-W3 |
DRAIN |
Not Qualified |
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
TO-205AD |
NOT SPECIFIED |
NOT SPECIFIED |
10 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.06 ohm |
3.6 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
MO-193AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.1 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.2 ohm |
2.6 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.27 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.385 ohm |
.66 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.28 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.48 ohm |
.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.0318 ohm |
6 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
55 pF |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.027 ohm |
6.3 A |
DUAL |
R-PDSO-G3 |
TO-236AB |
40 pF |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.15 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.077 ohm |
2.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.00875 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
PURE MATTE TIN |
.02 ohm |
6 A |
DUAL |
R-PDSO-C8 |
1 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.053 ohm |
3.1 A |
DUAL |
R-PDSO-G8 |
1 |
MO-153AA |
e3 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.