Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Leshan Radio |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
2.3 ohm |
.32 A |
DUAL |
R-PDSO-G6 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
16.5 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
1 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.5 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
LOW THRESHOLD |
TO-92 |
e3 |
60 pF |
TS 16949 |
|||||||||||||||||||
|
Linear Integrated Systems |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
SILICON |
DUAL |
R-PDSO-G3 |
NOT SPECIFIED |
NOT SPECIFIED |
3 pF |
|||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.295 ohm |
1.6 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
25.5 W |
1 |
52 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
52 A |
||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.075 ohm |
2.7 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.25 W |
PLASTIC/EPOXY |
SWITCHING |
45 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.585 ohm |
1 A |
DUAL |
R-PDSO-G6 |
1 |
e1 |
10 |
260 |
10 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.047 ohm |
3.16 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
29 pF |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.053 ohm |
3.1 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
105 pF |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.053 ohm |
3.1 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
105 pF |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
1 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
5.2 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.022 ohm |
5.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Calogic |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
UNSPECIFIED |
SWITCHING |
10 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
-55 Cel |
70 ohm |
.05 A |
DUAL |
R-PDSO-G4 |
.5 pF |
||||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
6 ohm |
.27 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
ESD PROTECTION |
TO-226AA |
e0 |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
800 ohm |
.03 A |
DUAL |
R-PDSO-G3 |
3 |
30 |
260 |
|||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3 ohm |
.35 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
8 pF |
||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3 ohm |
.35 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
8 pF |
||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1.2 ohm |
.64 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
50 pF |
||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.3 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e3 |
5 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
.7 W |
PLASTIC/EPOXY |
240 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.16 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
16 ohm |
.16 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
7 pF |
|||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Matte Tin (Sn) |
50 ohm |
.09 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.25 ohm |
DUAL |
R-PDSO-G4 |
1 |
SOURCE |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
Diodes Incorporated |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Micro Commercial Components |
60 V |
MATTE TIN |
5.3 ohm |
.34 A |
1 |
e3 |
10 |
260 |
||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.417 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.47 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
1.1 ohm |
.47 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
30 |
260 |
|||||||||||||||||||
Micro Commercial Components |
50 V |
2.3 ohm |
.37 A |
||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.23 W |
PLASTIC/EPOXY |
SWITCHING |
10 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.05 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
TIN |
120 ohm |
.05 A |
DUAL |
R-PDSO-G4 |
SUBSTRATE |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
UNSPECIFIED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL GOLD |
.075 ohm |
2.2 A |
BOTTOM |
R-XBCC-N3 |
1 |
e4 |
30 |
260 |
10.5 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.54 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.55 ohm |
.54 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
ESD PROTECTED |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.47 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.25 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
8.7 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.14 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
5 ohm |
.14 A |
DUAL |
R-PDSO-F6 |
1 |
Not Qualified |
HIGH RELIABILITY, LOW THRESHOLD |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.055 ohm |
4.8 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
7 |
FLATPACK |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.008 ohm |
1.3 A |
QUAD |
R-PQFP-N7 |
1 |
DRAIN SOURCE |
Not Qualified |
e3 |
30 |
260 |
75 pF |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.04 ohm |
2.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.625 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.83 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.5 ohm |
.83 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
30 pF |
|||||||||||||||||||
Good-ark Electronics |
|||||||||||||||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7.7 A |
50 mJ |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
1.5 ohm |
.96 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
Not Qualified |
TO-261AA |
e0 |
||||||||||||||||||||||
National Semiconductor |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
250 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
NO |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
MATTE TIN |
250 ohm |
BOTTOM |
O-PBCY-T3 |
TO-92 |
e3 |
||||||||||||||||||||||||||
Defense Logistics Agency |
N-CHANNEL |
SINGLE |
NO |
METAL |
AMPLIFIER |
35 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
TO-72 |
MIL-19500/428E |
||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
2 pF |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.403 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.196 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
6 ohm |
.196 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
4.1 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
6.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
3.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.12 ohm |
2.4 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
IEC-60134 |
|||||||||||||||||||
|
Nexperia |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.034 ohm |
5.2 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
IEC-60134 |
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|
Nexperia |
TIN |
1 |
e3 |
30 |
260 |
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|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.035 ohm |
7.1 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
260 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.