AOU4N60 by Alpha & Omega Semiconductor | Transistors

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Manufacturer	Alpha & Omega Semiconductor
Manufacturer's Part Number	AOU4N60
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;
Datasheet	AOU4N60 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	235 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
JEDEC-95 Code:	TO-251
Maximum Pulsed Drain Current (IDM):	14 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	2.3 ohm

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