AGRB10XM by Broadcom | Transistors

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Manufacturer	Broadcom
Manufacturer's Part Number	AGRB10XM
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.8 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
Datasheet	AGRB10XM Datasheet
In Stock	289

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	31.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Peak Reflow Temperature (C):	240

Pricing (USD)

Qty.	Unit Price	Ext. Price
289	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;