VMMK-1225-TR1G by Broadcom | Transistors

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Manufacturer	Broadcom
Manufacturer's Part Number	VMMK-1225-TR1G
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Transistor Application: AMPLIFIER; No. of Terminals: 8;
Datasheet	VMMK-1225-TR1G Datasheet
In Stock	186

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.05 A
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XDCC-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	.25 W
Moisture Sensitivity Level (MSL):	1
Minimum Power Gain (Gp):	8.7 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	5 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.05 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
186	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;