Broadcom - VMMK-2203

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.

Analog Devices' MAX2643EXT+T is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm input power, with an operating temperature range of -40 to 85°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

Broadcom's MGA-62563-TR1G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, surface mounting, and requires 3-5V power supply with a max current draw of 77 mA.

SGA6489Z by Qorvo is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40°C to 85°C. This component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND HIGH POWER;

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.

WIDE BAND LOW POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm;

The Mini-circuits MAR-3SM is a wide band low power RF amplifier with 8 dB gain and 50 ohm impedance. It operates from 0 to 2000 MHz, handling up to 13 dBm input power. Ideal for RF & microwave applications requiring compact, surface mount components with high performance.

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.

TGA2578-CP by Qorvo is a GAN technology RF amplifier with 26 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. This module features -2.8V/28V power supplies, surface mounting, and requires 400mA supply current.

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.