Diodes Incorporated - BS870

  1. Home
  2. Diodes Incorporated - BS870
BS870 by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number BS870
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Drain Current (Abs) (ID): .25 A; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet BS870 Datasheet
In Stock63
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .31 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): .25 A
Maximum Drain Current (Abs) (ID): .25 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
63 - -

Popular Products

Category Top Products

IRLML6344TRPBF by International Rectifier

IRLML6344TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
SI7850DP-T1-GE3 by Vishay Intertechnology

SI7850DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7850DP-T1-GE3 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 40A IDM and 11mJ EAS, operating in enhancement mode. With a compact rectangular package style and flat terminals, it offers high performance in a small outline design.
SI7463ADP-T1-GE3 by Vishay Intertechnology

SI7463ADP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
SCT3080KLGC11 by ROHM

SCT3080KLGC11

ROHM

ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
ZXMP10A18GTA by Diodes Incorporated

ZXMP10A18GTA

Diodes Incorporated

ZXMP10A18GTA by Diodes Inc. is a P-CHANNEL power FET with 100V DS breakdown voltage, 16.5A max pulsed drain current, and 0.15 ohm max drain-source on resistance. It is used for switching applications in automotive industry (AEC-Q101).
FQD1N80TM by Fairchild Semiconductor

FQD1N80TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
NVMFS5113PLT1G by Onsemi

NVMFS5113PLT1G

Onsemi

NVMFS5113PLT1G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 415A and an avalanche energy rating of 315mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of MSL1.
IRF640 by Philips Semiconductors

IRF640

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; JESD-609 Code: e3;
AUIRF3205ZSTRL by International Rectifier

AUIRF3205ZSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
FDD4685 by Fairchild Semiconductor

FDD4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
IRLML6246TRPBF by International Rectifier

IRLML6246TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
NTD3055-094T4G by Onsemi

NTD3055-094T4G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRF740PBF by Vishay Siliconix

IRF740PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
SI7489DP-T1-E3 by Vishay Intertechnology

SI7489DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7489DP-T1-E3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 83W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
IRFH4253DTRPBF by Infineon Technologies

IRFH4253DTRPBF

Infineon Technologies

Infineon's IRFH4253DTRPBF is a N-CHANNEL Power FET with 35A Max Drain Current and 50W Max Power Dissipation. Ideal for high-power applications, it operates up to 150°C, featuring METAL-OXIDE SEMICONDUCTOR tech in a surface-mount package.
SQJ459EP-T1_GE3 by Vishay Intertechnology

SQJ459EP-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.
IRLML0060TRPBF by Infineon Technologies

IRLML0060TRPBF

Infineon Technologies

Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
STD12NF06LT4 by STMicroelectronics

STD12NF06LT4

STMicroelectronics

STD12NF06LT4 by STMicroelectronics is an N-channel power FET with a 60V DS breakdown voltage and 48A max pulsed drain current. It is used for switching applications, operates in enhancement mode, and has a built-in diode. The transistor features a 0.12 ohm max drain-source resistance and can handle up to 30W of power dissipation.
AUIRF5210STRL by International Rectifier

AUIRF5210STRL

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
IRF540NLPBF by International Rectifier

IRF540NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): 30;