Image shown is a representation only.
| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMC1229UFDB-13 |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY; |
| Datasheet | DMC1229UFDB-13 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 5.6 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 2.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .029 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
DMC1229UFDB-13DICT DMC1229UFDB-13DICT-ND 31-DMC1229UFDB-13CT -DMC1229UFDB-13DICT DMC1229UFDB-13DITR-ND DMC1229UFDB-13DIDKR-ND 31-DMC1229UFDB-13DKR DMC1229UFDB-13DI-ND 31-DMC1229UFDB-13TR DMC1229UFDB-13DI DMC1229UFDB-13DIDKR -DMC1229UFDB-13DITR DMC1229UFDB-13DITR |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 12 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 5.6 A |
| Peak Reflow Temperature (C): | 260 |









