Diodes Incorporated - DMG1026UVQ-7

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DMG1026UVQ-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMG1026UVQ-7
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
Datasheet DMG1026UVQ-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .38 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.8 ohm
Other Names: 31-DMG1026UVQ-7TR
31-DMG1026UVQ-7CT
DMG1026UVQ-7-ND
31-DMG1026UVQ-7DKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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