DMN12M8UCA10-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMN12M8UCA10-7
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.75 W; Terminal Finish: NICKEL GOLD; Maximum Feedback Capacitance (Crss): 202 pF;
Datasheet	DMN12M8UCA10-7 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	110 A
Surface Mount:	YES
Terminal Finish:	NICKEL GOLD
No. of Terminals:	10
Maximum Power Dissipation (Abs):	2.75 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N10
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0062 ohm
Maximum Feedback Capacitance (Crss):	202 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V
Reference Standard:	MIL-STD-202

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