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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | ZVC2106E |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS; Surface Mount: NO; Package Style (Meter): IN-LINE; Peak Reflow Temperature (C): 235; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | ZVC2106E Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 10 |
Configuration: | SEPARATE, 4 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .28 A |
Maximum Pulsed Drain Current (IDM): | 3 A |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
JESD-609 Code: | e0 |
No. of Terminals: | 14 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PDIP-T14 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | 235 |
Maximum Drain-Source On Resistance: | 5 ohm |