Fairchild Semiconductor - FCH072N60F_F085

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FCH072N60F_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FCH072N60F_F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 481 W; Maximum Drain Current (Abs) (ID): 52 A; Transistor Application: SWITCHING;
Datasheet FCH072N60F_F085 Datasheet
In Stock150
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 100 ns
Maximum Drain Current (ID): 52 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 481 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 200 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .072 ohm
Avalanche Energy Rating (EAS): 1128 mJ
Other Names: FCH072N60F_F085
2832-FCH072N60F-F085-488
FCH072N60F_F085-ND
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 52 A
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