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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | AIGB30N65H5 |
Description | N-Channel; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 55 A; Maximum Collector-Emitter Voltage: 650 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 4.8 V; |
Datasheet | AIGB30N65H5 Datasheet |
In Stock | 575 |
NAME | DESCRIPTION |
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Nominal Turn Off Time (toff): | 215 ns |
Maximum Collector Current (IC): | 55 A |
Maximum Power Dissipation (Abs): | 188 W |
Maximum Collector-Emitter Voltage: | 650 V |
Nominal Turn On Time (ton): | 30 ns |
Transistor Element Material: | SILICON |
Maximum Gate-Emitter Threshold Voltage: | 4.8 V |
Maximum Operating Temperature: | 175 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Polarity or Channel Type: | N-Channel |
Maximum VCEsat: | 2.1 V |
Minimum Operating Temperature: | -40 Cel |