Infineon Technologies - AUIRFSL8409

  1. Home
  2. Infineon Technologies - AUIRFSL8409
AUIRFSL8409 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRFSL8409
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; Maximum Drain Current (ID): 195 A;
Datasheet AUIRFSL8409 Datasheet
In Stock879
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 375 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 195 A
Maximum Drain Current (Abs) (ID): 195 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
879 $3.830 $3,366.570

Popular Products

Category Top Products

2N7002K by Philips Semiconductors

2N7002K

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .34 A; Operating Mode: ENHANCEMENT MODE;
BSC028N06NSATMA1 by Infineon Technologies

BSC028N06NSATMA1

Infineon Technologies

Infineon BSC028N06NSATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0028 ohm RDS(on), and 23A ID. Ideal for SWITCHING applications due to its 400A IDM and 100mJ EAS ratings. Suitable for ENHANCEMENT MODE operation in various electronic devices.
IRF640NSTRLPBF by International Rectifier

IRF640NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
IRF9640STRLPBF by International Rectifier

IRF9640STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Power Dissipation Ambient: 125 W; Minimum DS Breakdown Voltage: 200 V;
IRFP460 by NXP Semiconductors

IRFP460

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .27 ohm; JEDEC-95 Code: TO-247;
BSP318SH6327XTSA1 by Infineon Technologies

BSP318SH6327XTSA1

Infineon Technologies

Infineon's BSP318SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 10.4A Pulsed Drain Current. Ideal for automotive applications, it features a built-in diode, 0.15 ohm On Resistance, and 260°C Peak Reflow Temperature.
IRLML6346TRPBF by International Rectifier

IRLML6346TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
IRFB4110PBF by Infineon Technologies

IRFB4110PBF

Infineon Technologies

IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
IRF640 by Unitrode

IRF640

Unitrode

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
FDS4559_F085 by Fairchild Semiconductor

FDS4559_F085

Fairchild Semiconductor

FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
NDT3055L by National Semiconductor

NDT3055L

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
ZXMP10A18KTC by Diodes Incorporated

ZXMP10A18KTC

Diodes Incorporated

ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
BSS138 by Vishay Intertechnology

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
SQJ479EP-T1_GE3 by Vishay Intertechnology

SQJ479EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
BSC900N20NS3GATMA1 by Infineon Technologies

BSC900N20NS3GATMA1

Infineon Technologies

BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
IRF740PBF by Vishay Intertechnology

IRF740PBF

Vishay Intertechnology

Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
IRFR9024NTRPBF by Infineon Technologies

IRFR9024NTRPBF

Infineon Technologies

IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
SQM120P10-10M1L_GE3 by Vishay Intertechnology

SQM120P10-10M1L_GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
CSD19537Q3 by Texas Instruments

CSD19537Q3

Texas Instruments

CSD19537Q3 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 219A Max Pulsed Drain Current, and 0.0166 ohm Max Drain-Source On Resistance. Ideal for high-power switching circuits with an operating temperature range of -55 to 150 °C.
IRLML6402 by International Rectifier

IRLML6402

International Rectifier

IRLML6402 by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM, 11mJ EAS, and 0.065 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.